具有高电流密度的小电流沟槽肖特基势垒二极管  

A Small Current Trench Schottky Barrier Diode with High Current Density

作　　者：庄翔 张超 Zhuang Xiang;Zhang Chao(Jiangsu Jiejie Microelectronics Co.,Ltd.,Nantong 226000,China;Jiejie Semiconductor Co.,Ltd.,Nantong 226000,China)

机构地区：[1]江苏捷捷微电子股份有限公司,江苏南通226000 [2]捷捷半导体有限公司,江苏南通226000

出　　处：《半导体技术》2022年第3期199-204,共6页Semiconductor Technology

摘　　要：研制了一种DFN1006-2L封装的小电流沟槽肖特基势垒二极管,其具有高电流密度、超低正向压降和低漏电特性。与常规平行条状结构排布的沟槽肖特基势垒二极管不同,该器件采用圆形网状结构排布设计,增加了器件中肖特基区域面积,提高了电流密度、降低了正向压降。该器件基于6英寸(1英寸=2.54 cm)CMOS工艺平台制备。与采用SOD-323封装的1 A、40 V平面小电流肖特基势垒二极管B5819WS相比,通过对沟槽结构关键尺寸和工艺条件的设计和优化,封装尺寸缩小88%,电流密度555 A/cm^(2)下正向压降典型值为0.519 V,反向电流100μA下反向击穿电压为48.98 V,反向电压40 V下反向漏电流为3.02μA。该器件具有更高的电流密度,可满足印制电路板(PCB)小型化需求。A small current trench Schottky barrier diode with DFN1006-2 L package was developed.The device has the characteristics of high current density,ultra-low forward voltage drop and low leakage current.Different from the conventional trench Schottky barrier diode with parallel strip arrangement,a circular mesh arrangement design was adopted to increase the area of the Schottky region in the device,the current density was improved and the forward voltage drop was reduced.The device was manufactured on a 6 inch(1 inch=2.54 cm) CMOS process platform.Compared with the 1 A/40 V small current planar Schottky barrier diode of B5819 WS with SOD-323 package,through the design and optimization of the key dimensions and process conditions of the trench structure,the package size of the device is reduced by 88%,the typical value of the forward voltage drop is 0.519 V at a current density of 555 A/cm^(2),and the reverse breakdown voltage is 48.98 V at a reverse current of 100 μA.The reverse leakage current is 3.02 μA at a reverse voltage of 40 V.The device has a higher current density and can meet the demand of the printed circuit board(PCB)miniaturization.

关 键 词：沟槽肖特基势垒二极管 正向压降 反向电流 电流密度 方形扁平无引脚(DFN)封装 

分 类 号：TN311.7[电子电信—物理电子学]