Ka波段GaN HEMT高效率功率放大器MMIC  

Ka-Band GaN HEMT High Efficiency Power Amplifier MMIC

作　　者：杜鹏搏 王瑜[1,3] 焦雪龙 刘学利 崔朝探 任志鹏 曲韩宾 Du Pengbo;Wang Yu;Jiao Xuelong;Liu Xueli;Cui Zhaotan;Ren Zhipeng;Qu Hanbin(North-China Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China;The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;Hebei Satellite Communication RF Technology Innovation Center,Shijiazhuang 050200,China)

机构地区：[1]河北新华北集成电路有限公司,石家庄050200 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]河北省卫星通信射频技术创新中心,石家庄050200

出　　处：《半导体技术》2022年第3期231-236,共6页Semiconductor Technology

摘　　要：研制了一款基于AlGaN/GaN高电子迁移率晶体管(HEMT)工艺的Ka波段功率放大器(PA)单片微波集成电路(MMIC)。MMIC采用三级级联放大结构,在末级采用簇丛型合成网络实现8胞功率合成,电路输入端和级间采用低通电抗式匹配网络,输出端采用带通电抗式匹配网络,并结合稳定网络实现高效稳定的特性。对所设计的功率放大器MMIC进行了流片验证,芯片面积为4.3 mm×2.9 mm。测试结果表明,在漏极偏置电压为20 V(100μs脉宽、10%占空比),栅极偏置电压为-1.6 V,输入功率为18 dBm的条件下,该款功率放大器MMIC的工作频率为27~33 GHz,饱和输出功率大于10 W,功率增益大于22 dB,功率附加效率高达30%。A Ka-band power amplifier(PA)monolithic microwave integrated circuit(MMIC) based on AlGaN/GaN high electron mobility transistor(HEMT) technology was developed.The three-stage cascaded amplifier structure was adopted.In the final stage,the cluster synthesis network was used to realize 8-cell power synthesis.The low-pass reactance matching network was used at the input and inter stage of the circuit,and the band-pass reactance matching network was used at the output stage,which was combined with the stable network to achieve high efficiency and stability characteristics.The designed PA MMIC was fabricated and verified,and the chip size was 4.3 mm×2.9 mm.The measurement results show that under the condition of the drain bias voltage of 20 V(100 μs pulse width,10% duty cycle),the gate bias voltage of-1.6 V and the input power of 18 dBm,the working frequency of the PA MMIC is 27-33 GHz,the saturated output power is greater than 10 W,the power gain is higher than 22 dB,and the power added efficiency is up to 30%.

关 键 词：功率放大器(PA) 高电子迁移率晶体管(HEMT) 单片微波集成电路(MMIC) 功率合成 奇模抑制 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75