Monolithic thin film lithium niobate electro-optic modulator with over 110 GHz bandwidth  

作　　者：Fan Yang Xiansong Fang Xinyu Chen Lixin Zhu Fan Zhang Zhangyuan Chen Yanping Li 杨帆;方先松;陈心羽;朱立新;张帆;陈章渊;李艳萍(State Key Laboratory of Advanced Optical Communication Systems and Networks,Department of Electronics,Peking University,Beijing 100871,China;Frontiers Science Center for Nano-optoelectronics,Peking University,Beijing 100871,China)

机构地区：[1]State Key Laboratory of Advanced Optical Communication Systems and Networks,Department of Electronics,Peking University,Beijing 100871,China [2]Frontiers Science Center for Nano-optoelectronics,Peking University,Beijing 100871,China

出　　处：《Chinese Optics Letters》2022年第2期148-152,共5页中国光学快报（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China(Nos.61690194 and 61911530162)。

摘　　要：High-performance thin film lithium niobate(LN) electro-optic modulators with low cost are in demand. Based on photolithography and wet etching, we experimentally demonstrate a thin film LN Mach–Zehnder modulator with a 3 d B bandwidth exceeding 110 GHz, which shows the potential of boosting the throughput and reducing cost. The fabricated modulator also exhibits a comparable low half-wave voltage-length product of ~2.37 V · cm, a high extinction ratio of >23 d B, and the propagation loss of optical waveguides of ~0.2 d B/cm. Besides, six-level pulse amplitude modulation up to 250 Gb/s is successfully achieved.

关 键 词：lithium niobate electro-optic modulator high bandwidth PHOTOLITHOGRAPHY wet etching 

分 类 号：TQ131.11[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程] TN15[电子电信—物理电子学]