面向纳米尺度金属互连线的蒙特卡洛模拟方法研究  

Monte Carlo Approach for Nano-scale Metal Interconnect Simulation

作　　者：胡远钊 杜刚 杨燚 赵钰迪 赵凯[1,2] HU Yuanzhao;DU Gang;YANG Yi;ZHAO Yudi;ZHAO Kai(Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument,Beijing Information Science and Technology University,Beijing 100101;School of Electronic Engineering and Computer Science,Peking University,Beijing 100871)

机构地区：[1]北京信息科技大学光电测试技术及仪器教育部重点实验室,北京100101 [2]北京大学信息科学技术学院,北京100871

出　　处：《北京大学学报（自然科学版）》2022年第2期201-209,共9页Acta Scientiarum Naturalium Universitatis Pekinensis

基　　金：北京市教委科研计划(KM202111232016)资助。

摘　　要：考虑各种尺度下金属互连线中主要的电子散射机制,提出一种可以准确地仿真金属互连线中电子输运特性的蒙特卡洛模拟方法。模拟结果表明,等离子激元散射对体材料互连线的电阻率贡献最大,其次是电子间散射;晶粒间界散射则主导纳米尺度线宽的金属电阻率,是导致“尺寸效应”的主要原因。通过与实验数据对比,证明所提方法可以准确地模拟从体材料到纳米尺度的金属互连电阻率。A Monte Carlo simulation method is proposed to simulate the electron transport characteristics in metal interconnects,with the presence of major scattering mechanisms.The results show that the plasma excimer scattering is the major contributor for bulk resistivity,followed by the electron-to-electron scattering.However,grain boundary scattering,dominating the resistivity of nanoscale interconnects,is the main reason for the“size effect”.The comparison of the simulated results and experimental data indicates that the proposed method can accurately calculate the resistivity for different metallic materials from bulk to nanoscale.

关 键 词：蒙特卡洛方法 散射 电阻率 金属互连 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]