AlGaN基紫外激光器超晶格p型注入层研究  

Investigation of AlGaN based ultraviolet laser diodes with superlattice p-type cladding layers

作　　者：李呈盛 李洁璐 李书平 LI Chengsheng;LI Jielu;LI Shuping(College of Physical Science and Technology,Xiamen University,Xiamen 361005,China)

机构地区：[1]厦门大学物理科学与技术学院,福建厦门361005

出　　处：《厦门大学学报（自然科学版）》2022年第2期202-206,共5页Journal of Xiamen University：Natural Science

基　　金：国家重点研发计划(2016YFB0400801,2016YFB0400800)。

摘　　要：AlGaN基紫外激光器(LD)已被广泛应用于生物、化学等领域,但目前还存在着诸如自发极化效应强烈、载流子注入效率低等问题,因此对于该类型LD的研究和改良十分重要.本文参考相关文献实验样品结构,采用PICS3D仿真软件,对不同结构的AlGaN基电注入边发射紫外LD进行仿真计算,在实验样品基础上提出了具有更加优异光电性能的超晶格p型层激光器结构,并通过比较能带结构、辐射复合率、电流分布等性质,进一步分析了激光器性能提升的机制.最终得到的优化后的紫外激光器具有更高的光输出功率、载流子注入、受激辐射复合率,更低的阈值电流、串联电阻、电子泄露等,实现了紫外激光器的性能提升.Although ultraviolet laser diodes(LD)have been widely used in biology and chemistry,challenges,such as strong spontaneous polarization effects,and low effective carrier injection among others,remain.Therefore,it is important to investigate and improve characteristics and the performance of LDs.Meanwhile,the software PICS3D has been used to simulate AlGaN-based electric-pumped edge emitting ultraviolet LDs with different structures based on experimental samples in the related literature.A new structure with special superlattice p-type cladding layer has been proposed.It features better optical-electrical characteristics,and we compare the band structure,carrier recombination,carrier density among others to analyze the mechanism for this improvement.In conclusion,these structures show excellent performances including higher output light power,carrier current density,and recombination rates,as well as lower threshold current,resistance,and electron leakage.

关 键 词：ALGAN 紫外激光器 超晶格 p型注入层 

分 类 号：R183[医药卫生—流行病学] R184[医药卫生—公共卫生与预防医学]