水热法制备Mo_(1-X)W_(X)S_(2)合金材料及晶体结构的研究  

Preparation of Mo_(1-X)W_(X)S_(2) Alloy Material and Crystal Structure by Hydrothermal Synthesis

作　　者：王岩 孙恩奇 杨学弦 朱岭 陈飞台 王小云[1] Wang Yan;Sun Enqi;Yang Xuexian;Zhu Ling;Chen Feitai;Wang Xiaoyun(College of Physics and Mechanical&Electrical Engineering,Jishou University,Jishou,Hunan 416000,China)

机构地区：[1]吉首大学物理与机电工程学院,湖南吉首416000

出　　处：《光学学报》2022年第4期127-132,共6页Acta Optica Sinica

基　　金：国家自然科学基金(11602094,21606101,11564013);湖南省自然科学基金(2019JJ50485)。

摘　　要：采用水热合成法制备合金半导体材料Mo_(1-X)W_(X)S_(2)(X为浓度),并应用扫描式电子显微镜(SEM)、X射线衍射(XRD)和拉曼光谱仪(Raman)对其形貌和晶体结构进行表征。实验结果表明,由SEM形貌测试发现,随着掺杂浓度的增加,Mo_(1-X)W_(X)S_(2)片状合金材料表面逐渐粗糙;由XRD晶体结构表征发现,随着掺杂浓度的增加,Mo_(1-X)W_(X)S_(2)的晶格常数逐渐增大;在合金材料的拉曼频移中,随着掺杂浓度的增加,Mo_(1-X)W_(X)S_(2)中A_(1g)振动模发生蓝移,而E_(2g)^(1)振动模发生红移。通过晶格结构和拉曼频移的检测和分析,证实水热合成法可制备不同浓度的Mo_(1-X)W_(X)S_(2)合金半导体材料。本方法可进一步拓展为二硫族化物合金半导体材料的批量制备方法,为合金半导体器件的制作和设计提供依据。The alloy semiconductor material Mo_(1-X)W_(X)S_(2)(Xis concentration)is prepared by hydrothermal synthesis method.The morphology and crystal structure of Mo_(1-X)W_(X)S_(2) are characterized by scanning electron microscopy(SEM),X-ray diffraction(XRD),and Raman spectroscopy(Raman).The experimental results show that the surface of Mo;X WXS;alloy becomes rough with the increase of doping concentration by SEM morphology test.The XRD crystal structure shows that the lattice constant of Mo_(1-X)W_(X)S_(2)increases with the increase of doping concentration.In the Raman shift of the alloy material,with the increase of doping concentration,the A_(1g)vibration mode in Mo_(1-X)W_(X)S_(2)has a blue shift,while the E_(2g)^(1)vibration mode has a red shift.Through the detection and analysis of lattice structure and Raman frequency shift,it is proved that the hydrothermal synthesis method can prepare Mo_(1-X)W_(X)S_(2)alloy semiconductor materials with different concentrations.This method can be further extended to the batch preparation method of disulfide alloy semiconductor materials,which provides a basis for the fabrication and design of alloy semiconductor devices.

关 键 词：材料 水热合成法 Mo_(1-X)W_(X)S_(2)合金 拉曼频移 晶格结构 

分 类 号：O472.3[理学—半导体物理] O766.3[理学—物理]