GaN基蓝光LED吸湿失效分析及改善  

Hygroscopic failure analysis and improvement of GaN-based blue LED

作　　者：刘春辉 许英朝 王嘉伟[1] 周琼 林翔宇 王明明 吴盼盼 LIU Chunhui;XU Yingchao;WANG Jiawei;ZHOU Qiong;LIN Xiangyu;WANG Mingming;WU Panpan(School of Optoelectronics and Communication Engineering,Xiamen University of Technology,Xiamen Fujian 361024,China;Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices,Xiamen University of Technology,Xiamen Fujian 361024,China)

机构地区：[1]厦门理工学院光电与通信工程学院,福建厦门361024 [2]厦门理工学院福建省光电技术与器件重点实验室,福建厦门361024

出　　处：《激光杂志》2022年第2期21-26,共6页Laser Journal

基　　金：厦门市科技计划重大项目(No.3502ZCQ20191002);厦门市科技计划项目(No.3502Z20183060);福建省自然科学基金面上项目(No.2019J01876)。

摘　　要：湿气进入LED芯片内部会加速其老化失效,影响其可靠性。本研究模拟实验LED芯片在湿气环境中产生的GaN氧化、金属电极吸湿腐蚀和金属离子迁移等失效外观。利用ALD沉积Al_(2)O_(3)钝化层替代传统的PECVD沉积SiO_(2)钝化层。通过逆电解的方式测试了其失效时间,通过高温高湿老化实验测试了其正向电压和亮度变化,实验结果表明:Al_(2)O_(3)钝化层的抗湿抗腐蚀能力优于SiO_(2),且Al_(2)O_(3)膜层越厚,效果越显著。The enter of moisture LED chip will accelerate its aging and failure,which affects its reliability.This study simulated failure appearance of GaN oxidation,metal electrode hygroscopic corrosion and metal ion migration of experimental LED chips in humid environment.ALD is used for depositing Al_(2)O_(3)passivation layer to replace traditional SiO_(2)passivation layer deposited by PECVD.The failure time of Al_(2)O_(3)passivation layer is tested by reverse electrolysis,and the changes of forward voltage and brightness of Al_(2)O_(3)passivation layer are tested in high temperature and humidity aging experiments.The experimental results show that moisture and corrosion resistances of Al_(2)O_(3)passivation layer are better than these of SiO_(2),and the thicker Al_(2)O_(3)film layer,the more significant effect.

关 键 词：LED 吸湿失效 钝化层 老化试验 AL O 

分 类 号：TN383[电子电信—物理电子学]