一种防闩锁的多嵌入阱SCR ESD器件  

A Latch-Up Immunity Multi-Embedded-Well SCR ESD Device

作　　者：侯佳力 胡毅 贺俊敏 王源[2,3] HOU Jiali;HU Yi;HE Junmin;WANG Yuan(Beijing Smart-Chip Microelectronics Technology Co.,Ltd.,Beijing 100192,P.R.China;School of Integrated Circuits,Peking University,Beijing 100871,P.R.China;Key Laboratory of Microelectronics Devices and Circuits(MoE),Beijing 100871,P.R.China)

机构地区：[1]北京智芯微电子科技有限公司,北京100192 [2]北京大学集成电路学院,北京100871 [3]北京大学微电子器件与电路教育部重点实验室,北京100871

出　　处：《微电子学》2022年第1期91-97,共7页Microelectronics

基　　金：国家电网有限公司总部管理科技项目资助(5100-201941436A-0-0-00)。

摘　　要：针对高压BCD工艺使用SCR器件ESD保护时面临的高触发电压与低维持电压之间的矛盾,设计了一种多嵌入阱可控硅(MEWSCR)结构。相比于常规SCR结构,首先,通过移动阳极/阴极的N+/P+掺杂区引入辅助泄放器件,MEWSCR结构实现了二次触发,增加了维持电压;其次,通过在阳极P+区和阴极N+区下方分别嵌入N浅阱和P浅阱,增强非平衡载流子的SRH复合作用,降低SCR的再生反馈效应,提高了维持电流。基于0.18μm BCD工艺,采用TCAD软件进行模拟。结果表明,新型MEWSCR器件的维持电压提升至23 V,维持电流提升1 A以上,满足ESD设计窗口要求。In order to solve the conflict between high trigger voltage and low holding voltage in the traditional SCRs used for high voltage BCD process, a novel latch-up immunity multi-embedded-well SCR(MEWSCR) ESD device was proposed. Compared with the traditional SCR structure, firstly, MEWSCR device inserted an auxiliary discharge device by moving N+ and P+ diffusion region of the anode and cathode. The auxiliary device induced the secondary trigger effect and increased the holding voltage. Secondly, N-type and P-type shallow wells were embedded under the P+ diffusion region of the anode and N+ diffusion region of the cathode, respectively. The embedded shallow well enhanced the SRH recombination of non-equilibrium carriers to reduce the snapback effect of SCR, which improved the holding current. Based on a 0.18 μm BCD process, TCAD software was used to simulate. The results showed that the holding voltage of the new MEWSCR device increased to 23 V, and the holding current increased to more than 1 A, which met the requirements of ESD design window.

关 键 词：静电放电 硅控整流器 维持电压 闩锁 

分 类 号：TN34[电子电信—物理电子学]