检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:范丽娜 吴倩楠 张世义[1,2,3,4] 侯文 李孟委[2,3,4,6] FAN Lina;WU Qiannan;ZHANG Shiyi;HOU Wen;LI Mengwei(School of Information and Communication Engineering,North University of China,Taiyuan 030051,P.R.China;Nantong Institute of Intelligent Opto-Mechatronics,North Univ.of China,Nantong,Jiangsu 226000,P.R.China;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051,P.R.China;Microsystems Integration Research Center,North University of China,Taiyuan 030051,P.R.China;School of Science,North University of China,Taiyuan 030051,P.R.China;School of Instrument and Electronics,North University of China,Taiyuan 030051,P.R.China)
机构地区:[1]中北大学信息与通信工程学院,太原030051 [2]中北大学南通智能光机电研究院,江苏南通226000 [3]中北大学前沿交叉科学研究院,太原030051 [4]中北大学微系统集成研究中心,太原030051 [5]中北大学理学院,太原030051 [6]中北大学仪器与电子学院,太原030051
出 处:《微电子学》2022年第1期98-103,共6页Microelectronics
基 金:国家自然科学基金资助项目(61705200);中北大学青年学术带头人资助项目(QX201905);型谱资助项目(2006WW0011)。
摘 要:针对射频MEMS滤波器的带外抑制能力较差和带内群延时不平坦的问题,设计了一种窄带宽、低插损、高选择性的L波段射频MEMS线性相位滤波器。选取高介电常数的衬底材料实现窄带传输,采用双层交指结构的谐振器实现线性相位,减小了电路体积。利用HFSS软件对滤波器的性能进行优化。结果表明,该滤波器的中心频率为1.46 GHz,带内插入损耗<1.97 dB,带内群延时波动<2 ns,在中心频率左右1 GHz处的带外抑制>70 dB。整体电路尺寸为10 mm×7.2 mm×0.62 mm。To solve the problems of poor out-of-band suppression ability and uneven in-band group delay of RF MEMS filters, an L-band RF MEMS linear phase filter with narrow bandwidth, low insertion loss and high selectivity was designed. Narrow-band transmission was realized by selecting substrate material with high dielectric constant, and linear phase was realized by using resonator with double-layer inter-digital structure. The volume of the circuit was reduced. The HFSS software was used to optimize the performance of the filter. The results showed that the center frequency of the filter was 1.46 GHz, the in-band insertion loss was less than 1.97 dB, the in-band group delay fluctuation was less than 2 ns, and the out-of-band rejection was more than 70 dB at 1 GHz around the center frequency. The overall circuit size was 10 mm×7.2 mm×0.62 mm.
分 类 号:TN389[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:3.147.77.120