A centripetal collection image sensor(CCIS)based on back gate modulation achieving 1T submicron pixel  

作　　者：Liqiao LIU Guihai YU Gang DU Xiaoyan LIU 

机构地区：[1]Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University,Beijing 100871,China

出　　处：《Science China(Information Sciences)》2022年第4期278-280,共3页中国科学（信息科学）（英文版）

基　　金：supported in part by National Key R&D Plan(Grant No.2016YFA0202101);National Natural Science Foundation of China(Grant No.61674008).

摘　　要：Dear editor,Image sensors have been rapidly developed for decades and widely used in many different fields[1,2].To achieve high resolution,the pixel size has been scaled down to 1μm for mass production[3].Nevertheless,the pixel size has to be further reduced to meet the growing demand for higher resolution.In CMOS image sensor(CIS),the pixel is composed of a photodiode,reset transistor,driver of the sourcefollower,and addressing transistor[4,5].However,the submicron pixel does not have enough space for too many transistors.To solve this problem,many studies have been done to develop one transistor(1T)image sensor[6].By combining different pixel functions in one transistor,the number of in-pixel transistors can be minimized.

关 键 词：TRANSISTOR image PIXEL 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]