VTD法制备不同基底倾角的硒化锑薄膜及太阳电池  

Preparation of Sb_(2)Se_(3) Film and Solar Cells with Different Substrate Inclination by VTD Method

作　　者：白晓彤 崔晓荣 张林睿[1,2] 周炳卿 BAI Xiaotong;CUI Xiaorong;ZHANG Linrui;ZHOU Bingqing(College of Physics and Elecrtonic Information,Inner Mongolia Normal University,Hohhot 010022,China;Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials,Hohhot 010022,China)

机构地区：[1]内蒙古师范大学物理与电子信息学院,呼和浩特010022 [2]内蒙古自治区功能材料物理与化学重点实验室,呼和浩特010022

出　　处：《硅酸盐通报》2022年第3期1063-1068,共6页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(51262022);内蒙古自治区自然科学基金博士基金(2020BS02011)。

摘　　要：硒化锑(Sb_(2)Se_(3))具有较高丰度及良好的光电特性,是当前热门太阳电池材料之一。目前,在Sb_(2)Se_(3)的多种制备方法中,气相转移沉积法(VTD)因工艺简单且可大面积制备而备受关注。采用VTD法制备Sb_(2)Se_(3)薄膜的影响因素有多种,如腔体气压、反应温度、蒸发源与衬底的位置以及生长角度等。本文利用VTD法以不同的生长角度(30°、45°、60°、90°)制备了Sb_(2)Se_(3)薄膜,对其进行XRD、Raman、SEM、近红外-紫外反射表征。结果表明不同生长角度对薄膜的结构以及光学特性具有明显的影响。晶粒尺寸随着生长角度的增加而先增大后减小,同时薄膜的形貌由棒状生长转变为片状生长,在基底倾角为90°时,薄膜变得最为致密。近红外-紫外反射光谱表明倾角60°的样品在波长小于1100 nm的范围具有最低的反射率,在该角度下制备的FTO/CdS/Sb_(2)Se_(3)/C器件获得了2.38%的转换效率。Antimony selenide(Sb_(2)Se_(3))has become one of the most popular solar cell materials because of its high abundance and good photoelectric properties.At present,among many preparation methods of Sb_(2)Se_(3),vapor transfer deposition(VTD)has attracted much attention because of its simple process and large area preparation.There are many factors affecting the preparation of Sb_(2)Se_(3)films by VTD,such as chamber pressure,reaction temperature,the position of evaporation source and substrate,substrate inclination and so on.Sb_(2)Se_(3)thin films were prepared by VTD at different substrate inclinations(30°,45°,60°,90°)and characterized by XRD,Raman,SEM and near infrared-ultraviolet(NI-UV)reflection.The results show that different substrate inclinations have obvious effects on the structure and optical properties of the films.The grain size first increases and then decreases with the increase of substrate inclination.At the same time,the morphology of the film changes from rod to sheet.When the substrate inclination is 90°,the film becomes dense.The NI-UV reflection spectrum shows that the sample with an inclination of 60°,has the lowest reflectivity in the range of wavelength less than 1100 nm.The FTO/CdS/Sb_(2)Se_(3)/C device prepared at this angle has a conversion efficiency of 2.38%.

关 键 词：硒化锑 气相转移沉积法 基底倾角 太阳电池 微结构 带隙 

分 类 号：O47[理学—半导体物理]