前驱体通气时间对原子层沉积氧化锌薄膜的影响  

Effect of Precursor Aeration Time on Zinc Oxide Thin Film Prepared by Atomic Layer Deposition

作　　者：马铭辰 王国政[1] 王蓟[1] Ma Mingchen;Wang Guozheng;Wang Ji(School of Physics,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学物理学院,长春130022

出　　处：《微纳电子技术》2022年第3期231-235,241,共6页Micronanoelectronic Technology

基　　金：吉林省科技厅重点科技研发项目(20180201033GX);吉林省科技厅技术攻关项目(20190302125GX);吉林省科技厅重大科技专项(20200501006GX);吉林省教育厅项目(JJKH20200777KJ)。

摘　　要：建立了反应腔室模型,模拟分析了原子层沉积(ALD)过程中前驱体质量分数随其通气时间的变化趋势。采用ALD法制备了ZnO薄膜,采用原子力显微镜(AFM)与扫描电子显微镜(SEM)对薄膜进行了表征,研究了不同二乙基锌通气时间下ZnO薄膜的表面形貌和厚度均匀性。模拟结果表明,前驱体通气时间越长,前驱体在整个反应腔室内的分布越均匀。在通气时间为300 ms时,二乙基锌可以均匀地分布在反应腔室内。实验以及测试结果表明,沉积温度为200℃时,随着二乙基锌通气时间的增加,薄膜的粗糙度呈现下降的趋势。在二乙基锌通气时间为300 ms时,样品粗糙度为3.52 nm。此外,随前驱体通气时间的增加,薄膜厚度也会有所增加,生长的薄膜也更加致密、均匀。A reaction chamber model was established to simulate and analyze the variation trend of precursor mass fraction with aeration time in atomic layer deposition(ALD)process.ZnO thin film was prepared by ALD.The thin film was characterized by atomic force microscope(AFM)and scanning electron microscope(SEM).The surface morphology and thickness uniformity of the ZnO thin film at different diethylzinc aeration time were studied.The simulation results show that the longer the aeration time of precursor,the more uniform the distribution of precursor in the whole reaction chamber.Diethylzinc can be uniformly distributed in the reaction chamber when the aeration time is 300 ms.Experiment and test results show that as the diethylzinc aeration time increases,the roughness of the thin film shows a downward trend at the deposition temperature of 200℃.The roughness of the sample is 3.52 nm when the aeration time of diethylzinc is 300 ms.In addition,with the increase of the aeration time of precursor,the thickness of the thin film will increase,and the thin film will be more dense and uniform.

关 键 词：原子层沉积(ALD) 流体分析 ZNO薄膜 表面粗糙度 薄膜均匀性 

分 类 号：TN304.21[电子电信—物理电子学] TN304.054