用于制备微纳米玻璃结构的加工工艺  

Fabrication Processes of Nano/Micro Structures on Glass

作　　者：权雪玲 刘民[1] 付学成[1] 黄胜利 凌天宇 瞿敏妮 程秀兰 Quan Xueling;Liu Min;Fu Xuecheng;Huang Shengli;Ling Tianyu;Qu Minni;Cheng Xiulan(Center for Advanced Electronic Materials and Devices,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]上海交通大学电子信息与电气工程学院先进电子材料与器件平台,上海200240

出　　处：《微纳电子技术》2022年第3期272-277,共6页Micronanoelectronic Technology

基　　金：2018年度上海研发公共服务平台建设项目(18DZ2295400);上海交通大学决策咨询课题资助项目(JCZXSJA2018-003);上海交通大学实验室创新研究课题资助项目(16SJ-007)。

摘　　要：玻璃基材具备很多优点,是理想的微纳加工基材之一。随着在玻璃基材上加工的微纳结构越来越复杂,对玻璃微纳加工工艺的要求也越来越高。将现在普遍使用的半导体微纳加工工艺进行择优组合用于玻璃加工,并针对电感耦合等离子体反应离子刻蚀(ICP-RIE)工艺参数,对比采用不同刻蚀气体组合工艺后的刻蚀结构形貌、刻蚀速率以及玻璃基材与常用刻蚀掩膜材料的刻蚀选择比,并进行了优化实验。采用优化的玻璃制备工艺,可使刻蚀速率达到约710 nm/min,最终获得高质量的玻璃微纳结构,其粗糙度降低到40 nm以下,侧壁垂直度接近90°。这些优化的工艺可广泛应用于相关精密控制玻璃结构的加工与制备。Glass with many advantages is one of the ideal substrate materials for nano/microfabrication.The more complicated the nano/micro structure on the glass substrate,the higher requirements for the nano/microfabrication technologies on glass.The widely used semiconductor nano/microfabrication technology was optimally applied in the glass fabrication.Especially,the etching conditions of inductively coupled plasma-reactive ion etching(ICP-RIE)processes with different mixed etching gases were investigated and optimized.The obtained glass samples were characterized and the etching results were compared,such as the morphology of etching structures,etching rate and etching selectivity ratios of glass to various etching mask materials.Finally,by the optimal glass fabrication process with an etching rate of about 710 nm/min,the high quality nano/micro glass structures were obtained.The roughness reduces below 40 nm and the vertical angle of the sidewall is close to 90°.The optimized processes can be widely used in the important fields for fabricating the precise and controllable structures of glass.

关 键 词：玻璃基材 微纳加工 干法刻蚀 电感耦合等离子体反应离子刻蚀(ICP-RIE) 刻蚀选择比 

分 类 号：TN305.7[电子电信—物理电子学]