CeO_(2)基磨粒在化学机械抛光中的研究进展  

Research Progress of CeO_(2)-based Abrasive Particles in Chemical Mechanical Polishing

作　　者：许宁[1] 马家辉 刘琦 Xu Ning;Ma Jiahui;Liu Qi(School of Material Science&Engineering,Shaanxi University of Sci-ence&Technology,Xi’an 710021,China)

机构地区：[1]陕西科技大学材料科学与工程学院,陕西西安710021

出　　处：《中国稀土学报》2022年第2期181-193,共13页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金青年项目(51905324)资助。

摘　　要：CeO_(2)由于其适当的机械性能及高的化学活性,更重要的是其对Si_(3)N_(4)/SiO_(2)的高选择性去除,使其被广泛应用于浅槽隔离化学机械抛光工艺中。本文论述了CeO_(2)基抛光液的抛光机制的研究进展,从CeO_(2)磨料的形貌尺寸、晶体结构、力学性能方面分析了磨料性质对抛光性能的影响,并进一步讨论了CeO_(2)基研磨颗粒及相关辅助抛光技术在CMP应用上的研究进展。以此为CeO_(2)基磨料的可控制备及新型抛光技术的发展提供借鉴,并希望能够促进CeO_(2)基研磨颗粒在抛光工艺中作用机制的揭示,使CeO_(2)抛光液更广泛地应用于材料的平坦化处理中。Rare earth CeO_(2)has been widely used in shallow trench isolation chemical mechanical polishing due to its proper mechanical properties and high chemical activity,and more importantly,its highly selective remov⁃al of Si_(3)N_(4)/SiO_(2).In this paper,the research progress of polishing mechanism of CeO_(2)-based polishes is dis⁃cussed.The influence of abrasive properties on polishing performance is analyzed from the aspects of morpholo⁃gy,size,crystal structure and mechanical properties of CeO_(2)abrasive,and the research progress of application of CeO_(2)-based abrasive particles and related auxiliary polishing technology in CMP is further discussed.This re⁃view can provide reference for the controllable preparation of CeO_(2)based abrasives and the development of new polishing technology,and it is hoped that the mechanism of CeO_(2)in polishing process can be revealed,so that CeO_(2)polishing fluid can be more widely used in material flattening treatment.

关 键 词：化学机械抛光 CeO_(2) 研磨颗粒 

分 类 号：O614.33[理学—无机化学]