10 MeV高能电子辐照对4H-SiC晶体结构和电学性质的影响  

Effect of 10 MeV high-energy electron irradiation on the crystal structure and electrical properties of 4H-SiC

作　　者：刘晓星 袁智明 李岳彬[1] 李根 LIU Xiaoxing;YUAN Zhiming;LI Yuebin;LI Gen(School of Physics and Electronic Science,Hubei University,Wuhan Hubei 430062;Shanxi Shuoke Crystal Company Limited,Taiyuan Shanxi 030062)

机构地区：[1]湖北大学物理与电子科学学院,湖北武汉430062 [2]山西烁科晶体有限公司,山西太原030062

出　　处：《首都师范大学学报（自然科学版）》2022年第2期29-35,41,共8页Journal of Capital Normal University：Natural Science Edition

基　　金：湖北省自然科学基金项目(2021CFB078);湖北大学自然科学基金项目(201910504000002)。

摘　　要：本文研究了10 MeV电子辐照对4H-SiC的晶体结构和电学性能的影响.X射线衍射和拉曼光谱分析结果表明:1.29×10^(19)、2.60×10^(19)和3.90×10^(19) cm^(−2)的电子辐照剂量对样品的晶体结构和晶型无显著影响,剂量达到5.20×10^(19) cm^(−2)后,样品内部会产生轻微的晶格畸变.通过非接触式电阻测量仪分析样品的电阻率,显示随着辐照累积剂量的增加,样品的电阻率逐渐增加,电阻分布逐渐均匀.The effects of 10 MeV electron irradiation on the crystal structure and electrical properties of 4H-SiC were studied.The results of X-ray diffraction(XRD)and Raman spectra showed that the electron irradiation dose of 1.29×10^(19),2.60×10^(19) and 3.90×10^(19) cm^(−2) had no significant effect on the crystal structure and morphology of the samples,and the dose reached 5.20×10^(19) cm^(−2),a slight lattice distortion occurred inside the sample.The resistivity of samples was analyzed by non-contact resistance measuring instrument.It was found that with the increase of irradiation cumulative dose,the resistivity of samples gradually increased and the resistance distribution gradually became uniform.

关 键 词：4H-SIC 高能电子辐照 电阻率 

分 类 号：O774[理学—晶体学]