Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes  

作　　者：Yuxuan Chen Jianwei Ben Fujun Xu Jinchai Li Yang Chen Xiaojuan Sun Dabing Li 

机构地区：[1]State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China [4]Fujian Key Laboratory of Semiconductor Materials and Applications,CI Center for OSED,College of Physical Science and Technology,Xiamen University,Xiamen 361005,China

出　　处：《Fundamental Research》2021年第6期717-734,共18页自然科学基础研究（英文版）

基　　金：supported by the National Natural Science Foundation for Distinguished Young Scholars of China(Grant No.61725403);the National Natural Science Foundation of China(Grants No.61922078,61874090 and 61974002);Key Research Program of CAS(Grant No.XDPB22);the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grants No.Y201945 and 2019222);the Key scien-tific and technological Program of Xiamen(Grant No.3502Z20191016);the Youth Talent Promotion Project of Chinese Institute of Electron-ics(Grant No.2020QNRC001);the Key-Area Research and Devel-opment Program of Suzhou Institute of Nano-Tech and Nano-Bionics(Grant No.20YZ10).

摘　　要：AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet(UV)light-emitting diodes(LEDs)owing to their direct,wide,and adjustable energy bandgap.AlGaN-based devices have extensive appli-cability owing to their stable physico-chemical properties.With decades of research effort,significant progress has been achieved in enhancing the working efficiency of AlGaN-based LEDs by optimizing the crystalline qual-ity,doping efficiency,and device design.In this review,methods to obtain high-quality AlGaN-based materials,achieve high doping efficiency,and design UV-LED structures are summarized and discussed.Finally,the issues that need to be addressed in AlGaN-based UV-LED devices are highlighted.

关 键 词：ALGAN Growth of AlGaN-based material Doping UV-LED 

分 类 号：TN31[电子电信—物理电子学]