Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor  

作　　者：Ji-Yao Du Xiao-Bo Li Tao-Fei Pu Jin-Ping Ao 都继瑶;李小波;蒲涛飞;敖金平(School of Automation and Electrical Engineering,Shenyang Ligong University,Shenyang 110159,China;Institute of Technology and Science,Tokushima University,Tokushima,Japan)

机构地区：[1]School of Automation and Electrical Engineering,Shenyang Ligong University,Shenyang 110159,China [2]Institute of Technology and Science,Tokushima University,Tokushima,Japan

出　　处：《Chinese Physics B》2022年第4期672-675,共4页中国物理B（英文版）

基　　金：supported by the Scientific Research Support Foundation for Introduced High-Level Talents of Shenyang Ligong University(Grant No.1010147000914);the Science and Technology Program of Ningbo(Grant No.2019B10129)。

摘　　要：Effect of anode area on temperature sensing ability is investigated for a vertical GaN Schottky-barrier-diode sensor.The current-voltage-temperature characteristics are comparable to each other for Schottky barrier diodes with different anode areas,excepting the series resistance.In the sub-threshold region,the contribution of series resistance on the sensitivity can be ignored due to the relatively small current.The sensitivity is dominated by the current density.A large anode area is helpful for enhancing the sensitivity at the same current level.In the fully turn-on region,the contribution of series resistance dominates the sensitivity.Unfortunately,a large series resistance degrades the temperature error and linearity,implying that a larger anode area will help to decrease the series resistance and to improve the sensing ability.

关 键 词：GAN temperature sensor Schottky contact vertical diode 

分 类 号：TN311.7[电子电信—物理电子学] TP212.11[自动化与计算机技术—检测技术与自动化装置]