Broadband multimodal emission in Sb-doped CaZnOS-layered semiconductors  

Sb掺杂的CaZnOS层状半导体中的宽带多模发射

作　　者：Xu Li Yuantian Zheng Ronghua Ma Zefeng Huang Chunfeng Wang Mingju Zhu Fuchun Jiang Yangyang Du Xian Chen Bolong Huang Feng Wang Bohan Wang Yu Wang Dengfeng Peng 李旭;郑元钿;马荣华;黄泽锋;王春枫;朱明炬;蒋福春;杜阳阳;陈献;黄勃龙;王锋;王博涵;王瑀;彭登峰(Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China;College of Materials Science and Engineering,Shenzhen University,Shenzhen 518060,China;Department of Applied Biology and Chemical Technology,The Hong Kong Polytechnic University,Hung Horn,Kowloon,Hong Kong SAR 999077,China;Department of Materials Science and Engineering,City University of Hong Kong,Hong Kong,Hong Kong SAR 999077,China;International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education,SZU-NUS Collaborative Innovation Center for Optoelectronic Science&Technology,Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China)

机构地区：[1]Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China [2]College of Materials Science and Engineering,Shenzhen University,Shenzhen 518060,China [3]Department of Applied Biology and Chemical Technology,The Hong Kong Polytechnic University,Hung Horn,Kowloon,Hong Kong SAR 999077,China [4]Department of Materials Science and Engineering,City University of Hong Kong,Hong Kong,Hong Kong SAR 999077,China [5]International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education,SZU-NUS Collaborative Innovation Center for Optoelectronic Science&Technology,Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China

出　　处：《Science China Materials》2022年第5期1329-1336,共8页中国科学（材料科学（英文版）

基　　金：supported by the National Natural Science Foundation of China (61875136 and 52002246);the Fundamental Research Project of Guangdong Province (2020A1515011315);Shenzhen Fundamental Research Project (JCYJ20190808170601664);the Science and Technology Innovation Project of Shenzhen Excellent Talents (RCBS20200714114919006);the Scientific Research Foundation as Phase II construction of high-level University for the Youth Scholars of Shenzhen University 2019 (000002110223)。

摘　　要：Mechanoluminescent(ML) smart materials are expected to be used in stress sensors, new displays, and advanced flexible optoelectronic devices, because of their unique mechanical-to-light energy conversion properties. However,the narrow-range ML emission characteristics of single materials limit their application scope. In this work, we report on the broadband multimodal emission in Sb-doped Ca Zn OS layered semiconductors. A series of Ca Zn OS layer-structured powders with different Sb^(3+) doping concentrations were synthesised using a high-temperature solid-phase method. The Ca Zn OS:Sb^(3+) phosphor achieved a wide range of ML spectra(400–900 nm), adjustable photoluminescence with double luminescent peaks located at 465 and 620 nm, and the X-rayinduced luminescence characteristics were systematically studied. We have also achieved ultra-broad warm white light ML emission of Sb^(3+) and Bi^(3+) co-doped samples. Therefore, it can be expected that these ML phosphors will be used in smart lighting, displays, visible stress sensors, and X-ray imaging and detections.力致发光(ML)智能材料由于其独特的机械能-光能转换特性,有望用于应力传感器、新型显示和先进的柔性光电器件.然而,单一材料的窄波长范围ML发射特性限制了它们的应用范围.在这项工作中,我们报道了Sb掺杂的Ca Zn OS层状半导体中的宽带多模态发射.使用高温固相法合成了一系列具有不同Sb^(3+)掺杂浓度的Ca Zn OS层状结构粉末.Ca Zn OS:Sb^(3+)荧光粉实现了400–900 nm ML的宽谱发光范围,可调光致发光,两个发射峰位于465和620 nm,我们还系统研究了X射线诱导发光特性.我们还实现了Sb^(3+)和Bi^(3+)共掺杂样品的超宽暖白光ML发射.因此,这些ML荧光粉将有望用于智能照明、显示、可见应力传感器以及X射线成像和检测.

关 键 词：DOPING light emission MECHANOLUMINESCENCE CaZnOS SEMICONDUCTORS 

分 类 号：TB381[一般工业技术—材料科学与工程]