基于硅外延片用石墨基座的温度均匀性研究  

Research on Temperature Uniformity Based on Graphite Susceptor for Silicon Epitaxial Wafer

作　　者：冯永平 何文俊 任凯 FENG Yongping;HE Wenjun;REN Kai(Nanjing Guosheng Electronic Co.,Ltd.,Nanjing 211153,China)

机构地区：[1]南京国盛电子有限公司,南京211153

出　　处：《电子与封装》2022年第4期59-63,共5页Electronics & Packaging

摘　　要：通过对电磁感应加热的硅外延化学气相沉积反应腔室建立理论分析模型,结合工程实验对比,研究了不同石墨材料和不同基座结构对基座表面温度均匀性的影响。结果显示,在工程中,选择合适的石墨材料、设计合适的基座结构对硅外延片电阻率均匀性有着很大的影响,但在提升产品质量的同时也要平衡经济效益。By establishing a theoretical analysis model and experimental comparisons for an electromagnetic induction heated silicon epitaxial chemical vapor deposition reaction chamber,the influence of different graphite materials and different susceptor structures on the temperature uniformity of the susceptor is studied.The results show that in engineering,choosing the right graphite material and designing the right base structure have a great influence on the resistivity uniformity of silicon epitaxial wafers,but it is necessary to balance economic benefits while improving product quality.

关 键 词：电磁感应 石墨基座 石墨材料 基座结构 电阻率均匀性 

分 类 号：TN305[电子电信—物理电子学]