一种使用集总元件实现的P波段推挽式功率放大器  

P-Band Push-Pull Power Amplifier Using Lumped Elements

作　　者：王琪 唐厚鹭 贺瑾 孙园成 WANG Qi;TANG Houlu;HE Jin;SUN Yuancheng(China Electronics Technology Group Corporation No.55 Research Institute,Nanjing 210000,China)

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210000

出　　处：《电子与封装》2022年第4期73-76,共4页Electronics & Packaging

摘　　要：采用集总元件实现了工作在400~450 MHz的巴伦结构,两输出端口的信号插损小于3.45 d B,相位差在180°±4°内;采用两个1.2 mm栅宽GaN管芯和集总元件实现了工作在400~450 MHz的推挽式功率放大器,在漏极电压28 V条件下,其连续波饱和输出功率大于37 d Bm,漏极效率实现66%~73%。该功率放大器验证了集总元件巴伦在P波段实现推挽式功率放大器的可行性,为进一步将该方法应用于大功率推挽式功率放大器以实现小型化提供了依据。A BALUN structure is realized over the frequency range from 400 MHz to 450 MHz by using lumped elements.The insertion loss of the two output ports is less than 3.45 d B and the phase difference is within 180°±4°.A push-pull power amplifier is realized over the frequency range from 400 MHz to 450 MHz by using 1.2 mm grid wide GaN core and lumped elements.Its output power is greater than 37 d Bm,and the drain efficiency is from 66%to 73%.The power amplifier verifies the feasibility of realizing P-band push-pull power amplifier using lumped elements,and provides a basis for miniaturization of high-power push-pull power amplifier.

关 键 词：集总元件 巴伦 推挽式 P波段 小型化 

分 类 号：TN386[电子电信—物理电子学]