Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature  被引量:3

室温斯格明子的隧道结器件的制备

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作  者:Sai Li Ao Du Yadong Wang Xinran Wang Xueying Zhang Houyi Cheng Wenlong Cai Shiyang Lu Kaihua Cao Biao Pan Na Lei Wang Kang Junming Liu Albert Fert Zhipeng Hou Weisheng Zhao 李赛;杜奥;王亚栋;王馨苒;张学莹;程厚义;蔡文龙;卢世阳;曹凯华;潘彪;雷娜;康旺;刘俊明;Albert Fert;侯志鹏;赵巍胜(Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China;Shenyuan Honors College,Beihang University,Beijing 100191,China;Beihang-Geortek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266104,China;Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China;Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 211102,China)

机构地区:[1]Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China [2]Shenyuan Honors College,Beihang University,Beijing 100191,China [3]Beihang-Geortek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266104,China [4]Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China [5]Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 211102,China

出  处:《Science Bulletin》2022年第7期691-699,共9页科学通报(英文版)

基  金:financial support from the National Key R&D Program of China(2018YFB0407602,and 2020YFA0309300);National Natural Science Foundation of China(61627813,61871008,62001019,12004024,and 51901081);Beijing Natural Science Foundation(4202043);Beijing Nova Program from Beijing Municipal Science and Technology Commission(Z201100006820042);National Natural Science Foundation of China-German Research Foundation(52061135105);Outstanding Research Project of Shen Yuan Honors College,BUAA(230121102);the Science and Technology Program of Guangzhou(202002030052);Joint Research Key Fund for Guangzhou and Shen Zhen(2021B1515120047)。

摘  要:Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last decade, while electrical detection compatible with semiconductor processes has not been achieved, and this is considered one of the most crucial gaps regarding the use of skyrmions in real applications. Here, we report the direct observation of nanoscale skyrmions in Co Fe B/Mg O-based magnetic tunnel junction devices at room temperature. High-resolution magnetic force microscopy imaging and tunneling magnetoresistance measurements are used to illustrate the electrical detection of skyrmions,which are stabilized under the cooperation of interfacial Dzyaloshinskii–Moriya interaction, perpendicular magnetic anisotropy, and dipolar stray field. This skyrmionic magnetic tunnel junction shows a stable nonlinear multilevel resistance thanks to its topological nature and tunable density of skyrmions under current pulse excitation. These features provide important perspectives for spintronics to realize highdensity memory and neuromorphic computing.斯格明子是一种具有拓扑非平庸手性涡旋态的磁性结构,因其纳米尺度和新奇电学调控特性,在未来信息技术中有着重要应用前景.在过去十年,斯格明子的电学激发成核和驱动已经在实验上被证明,然而与现行半导体工艺兼容的电学检测还没有实现,这被认为是斯格明子应用进程中亟需填补的空白.本研究成功制备了基于斯格明子的隧道结器件,并在实验上实现了室温下亚百纳米斯格明子的实空间观测及同步隧穿磁阻检测.与霍尔效应相比,斯格明子的隧穿磁阻检测方法使得信号强度提高了三个数量级以上.该研究进一步通过脉冲电流实现了斯格明子非易失、多阻态调控,并模拟人工突触和神经元器件功能.该器件的成功研制将极大推进斯格明子的应用,为高密度、超低功耗的类脑计算架构提供新的物理机制.

关 键 词:Topological spin texture Magnetic skyrmion NANODEVICE High-density memory Neuromorphic computing 

分 类 号:TP333[自动化与计算机技术—计算机系统结构] O469[自动化与计算机技术—计算机科学与技术]

 

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