STT-MRAM存储器抗磁场干扰能力研究  

Investigation of anti-magnetic interference ability for STT-MRAM memory

作　　者：申浩 王超 孙杰杰 Shen Hao;Wang Chao;Sun Jiejie(th Research Institute of China Electronics Technology Group,Wuxi 214000,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,无锡214000

出　　处：《国外电子测量技术》2022年第1期118-122,共5页Foreign Electronic Measurement Technology

摘　　要：自旋转移力矩磁随机存储器(STT-MRAM)作为一种新型非易失存储器,具有低功耗、读写速度快及与传统CMOS工艺兼容等特点,可作为Flash和静态随机存取存储器(SRAM)的理想替代品。STT-MRAM存储器的存储单元结构为磁性隧道结(MTJ),该结构由磁性材料组成,其单元特性参数易受外部磁场的干扰,因此,需要对STT-MRAM存储器的抗磁场干扰能力进行评估。通过对STT-MRAM存储单元工作机制的深入研究,分析了STT-MRAM在读写过程中受外部磁场的干扰程度,提出了一种STT-MRAM抗磁场干扰能力试验方法,设计并搭建了基于Xilinx VIRTEX4系列FPGA的STT-MRAM抗磁场干扰能力试验平台,进行了STT-MRAM存储器的抗磁干扰能力试验。试验结果表明,STT-MRAM存储器的写入过程易受外界磁场的干扰,当超过临界磁场强度45 Gs时,测试芯片出现写入错误,随着外加磁场的增大,错误数量呈指数形式增长;而STT-MRAM存储器的读取过程受外界磁场的干扰程度较低,测试芯片的抗磁场干扰能力可达500 Gs。As a new non-volatile memory,spin transfer torque-magnetic random access memory(STT-MRAM)has the characteristics of low power consumption,fast reading and writing speed,and compatibility with traditional CMOS technology,and can be used as an ideal substitute for Flash and SRAM.The memory cell structure of the STT-MRAM memory is a magnetic tunnel junction(MTJ),which is composed of magnetic materials,and its cell characteristic parameters are susceptible to interference from an external magnetic field.Therefore,it is necessary to evaluate the resistance to magnetic field interference of the STT-MRAM memory.Based on the in-depth study of the working mechanism of STT-MRAM storage cells,this paper analyzes the interference degree of external magnetic field in the process of STT-MRAM reading and writing,proposes a test method of STT-MRAM anti-magnetic field interference ability.A STT-MRAM anti-magnetic interference ability test platform based on Xilinx VIRTEX4 series FPGA was designed and built,and the anti-magnetic interference ability test of STT-MRAM memory was carried out.The test results show that the writing process of STT-MRAM memory is susceptible to the interference of external magnetic fields.When the external magnetic field strength exceeds 45 Gs,the test chip will have write errors.As the external magnetic field increases,the number of errors increases exponentially;and The reading process of STT-MRAM memory is less affected by external magnetic fields,and the anti-magnetic field interference capability of the test chip can reach 500 Gs.

关 键 词：非易失性 自旋转移力矩磁随机存储器 磁性隧道结 抗磁场干扰 存储器测试 

分 类 号：TN406[电子电信—微电子学与固体电子学]