基于氧化硅绝缘层改性的PMMA复合薄膜储能性能研究  

Improved Energy Storage PMMA Composite Film Based on SiO_(2) Insulating Layer

作　　者：张天栋 戚振飞 张昌海 冯宇 迟庆国[1] 陈庆国[1] ZHANG Tiandong;QI Zhenfei;ZHANG Changhai;FENG Yu;CHI Qingguo;CHEN Qingguo(School of Electrical and Electronic Engineering,Harbin University of Science and Technology,Harbin 150080,Heilongjiang Province,China)

机构地区：[1]哈尔滨理工大学电气与电子工程学院,黑龙江省哈尔滨市150080

出　　处：《中国电机工程学报》2022年第7期2797-2804,共8页Proceedings of the CSEE

基　　金：国家自然科学基金项目(51807042);黑龙江省自然科学基金优秀青年项目(YQ2020E031)。

摘　　要：聚合物电介质因具有击穿电压高、柔性好、成本低、加工容易和质量轻等优点而备受青睐,其在电气工程领域具有广泛的应用。该文以聚甲基丙烯酸甲酯(polymethyl methacrylate,PMMA)作为基体,二氧化硅(SiO_(2))作为绝缘层,综合利用溶液流延法和磁控溅射技术,成功制备了具有三明治结构的SiO_(2)/PMMA/SiO_(2)复合薄膜。在PMMA薄膜与金属电极之间引入宽禁带SiO_(2)薄层作为界面势垒层,能够抑制电极电荷注入,提升击穿强度;通过改变磁控溅射时间来调控SiO_(2)绝缘层生长厚度,系统研究SiO_(2)薄层厚度对复合薄膜的微观结构和介电性能的影响。研究表明,当磁控溅射工作时间为2h,SiO_(2)薄层厚度约为240nm,此时SiO_(2)/PMMA/SiO_(2)复合薄膜展现出优异的储能性能,最大放电能量密度为14.5J/cm;,是纯PMMA薄膜的1.42倍,充放电效率为87.4%。Polymer dielectrics are favored due to their advantages of high breakdown voltage,good scalability,low cost,easy processing and light weight,so they have been widely used in the field of electrical engineering.In this work,polymethyl methacrylate(PMMA)and silicon dioxide(SiO_(2))were chosen as the matrix and the insulating layer,respectively,and the SiO_(2)/PMMA/SiO_(2)composite films with a sandwiched structure were successfully prepared by the combined solution casting method and magnetron sputtering technology.The SiO_(2)insulating layer with wide energy band gap was introduced between the electrode-dielectric,which served as the interface barrier layer to inhibit the electrode injection and improve the breakdown strength.The thickness of SiO_(2)insulator films could be adjusted by changing the sputtering time,the effect of which on the microstructure and dielectric properties have been systematically studied.The results show that the SiO_(2)/PMMA/SiO_(2)composite films possess the optimal energy storage performances when the magnetron sputtering working time is 2 hours,corresponding a thickness of 240nm of SiO_(2)layer.The maximum discharge energy density is 14.5J/cm;and is 1.42 times higher than that of the pristine PMMA film,accompanying a discharge efficiency of 87.4%.

关 键 词：磁控溅射 界面势垒层 储能性能 聚甲基丙烯酸甲酯 二氧化硅 

分 类 号：TM21[一般工业技术—材料科学与工程]