双功能钨源制备硫化钨单层膜的生长机理  

Growth mechanism of WS_(2) monolayer by dual-function tungsten source

作　　者：朱金童 曹阳[1,3] 涂进春 张垠[4] 王洁琼[1] ZHU Jintong;CAO Yang;TU Jinchun;ZHANG Yin;WANG Jieqiong(State Key Laboratory of Marine Resources Utilization in South China Sea, Hainan University, Haikou 570228, China;School of Materials Science and Engineering, Hainan University, Haikou 570228, China;Qiongtai Normal University, Haikou 571127, China;School of Physics, Xi’an Jiaotong University, Xi’an 710049, China)

机构地区：[1]海南大学南海海洋资源利用国家重点实验室,海口570228 [2]海南大学材料科学与工程学院,海口570228 [3]琼台师范学院,海口571127 [4]西安交通大学物理学院,西安710049

出　　处：《中国科技论文》2022年第4期379-383,共5页China Sciencepaper

基　　金：国家自然科学基金资助项目(51901059)。

摘　　要：为了实现大面积、高质量二硫化钨(WS_(2))单层膜的可控制备,对双功能钨源制备硫化钨单层膜的机理进行了研究。通过两步化学气相沉积(chemical vapor deposition,CVD)法,以具有双功能的钠盐钨酸钠二水合物(Na_(2)WO_(4)·2H_(2)O)为钨源、硫粉(S)为硫源,制备出高质量、大面积的WS_(2)单层膜,并对其形貌和结构进行了表征。同时,通过对生长温度与载气种类的阶段性调控,阐述了WS_(2)单层膜的3个生长步骤(成核、扩展与融合和成形)及其生长机理。研究发现:钨酸钠在730℃的熔融态温度下,将保护性气体高纯氩(Ar)更换为还原性气体氩氢(Ar/H_(2))混合气,将促进钨源与硫源的结合以及WS_(2)薄膜的形成。在1050℃保温结束后重新换回高纯Ar,可以阻止Ar/H_(2)混合气中的氢气(H_(2))对WS_(2)单层膜及SiO_(2)/Si衬底的进一步刻蚀,从而获得高质量的二硫化钨单层膜。In order to achieve the controllable preparation of large-area and high-quality WS_(2) monolayers,the mechanism of preparing tungsten sulfide monolayers with bifunctional tungsten sources was studied.High-quality and large-area WS_(2) monolayer films were prepared by a two-step chemical vapor deposition(CVD)method using Na_(2)WO_(4)·2H_(2)O as the tungsten source and using S as the sulfur source.The morphology and structure of WS_(2) monolayer films were characterized,and the three steps growth mechanism(nucleation,expansion and fusion,merging)of WS_(2) monolayer were described by regulating the growth temperature and carrier gas type gradually.In addition,it is found that both the combination of tungsten with sulfur sources and the formation of WS_(2) film were promoted by changing the protective gas Ar to the reducing gas Ar/H_(2) at 730℃.After the end of heat preservation at 1050℃,high purity Ar was replaced again,which can prevent H_(2) in Ar/H_(2) mixture from further etching WS_(2) monolayer and SiO_(2)/Si substrate to obtain high-quality tungsten disulfide monolayer.

关 键 词：薄膜物理学 化学气相沉积 二硫化钨 单层膜 生长机理 

分 类 号：O484.1[理学—固体物理]