5G基站宽带功率放大器芯片性能评价方法研究  

Research on the Performance Evaluation Method of Broad-band Power Amplifier IC for 5G Basestation

作　　者：菅端端[1] 任翔[1] 南江 刘舒宁 郭轩 刘果果[2] 

机构地区：[1]中国电子技术标准化研究院 [2]中国科学院微电子研究所

出　　处：《信息技术与标准化》2022年第4期7-11,16,共6页Information Technology & Standardization

摘　　要：为适应5G基站应用特点对宽带功率放大器芯片测试提出的新需求,对5G基站功率放大器测试的特点进行分析,梳理了5G基站功率放大器芯片EVM和ACLR等主要测试项,提出了适用于5G基站应用场景的测试方法和一套综合评价方法,并依据该方法对此类芯片的性能指标开展了测试和评价,为用户选型和性能评价提供了支撑。In order to meet the new requirements for broadband power amplifier chip testing put forward by the application characteristics of 5G base stations,based on the analysis of the characteristics of broadband power amplifier tests for 5G base stations,the main test items of broadband power amplifier chips for 5G base stations are sorted out,and a test method and a set of comprehensive evaluation methods suitable for 5G base station application scenarios are proposed.The performance indicators of power amplifier chips for 5G base stations have been tested and evaluated to provide support for user selection and performance evaluation.

关 键 词：5G基站 宽带功率放大器 邻近信道泄露比 矢量误差幅度 

分 类 号：TN722.75[电子电信—电路与系统] TN929.5TN40