预热温度对Sb_(2)(S,Se)_(3)薄膜性能的影响  

The Influence of Preheating Temperature on the Performance of Sb_(2) (S,Se)_(3) Film

作　　者：崔晓荣 白晓彤 周炳卿[1,2] 张林睿 CUI Xiao-rong;BAI Xiao-tong;ZHOU Bing-qing;ZHANG Lin-rui(College of Physics and Electronic Information,Inner Mongolia Normal University,Hohhot 010022,China;Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials,Hohhot 010022,China)

机构地区：[1]内蒙古师范大学物理与电子信息学院,内蒙古呼和浩特010022 [2]内蒙古自治区功能材料物理与化学重点实验室,内蒙古呼和浩特010022

出　　处：《内蒙古师范大学学报（自然科学版）》2022年第3期285-291,298,共8页Journal of Inner Mongolia Normal University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(51262022,21663018);内蒙古自治区自然科学基金资助项目(2020BS02011);内蒙古师范大学科研启动经费项目资助(112/1004031909)。

摘　　要：通过溶胶凝胶法研究不同预热温度(140℃、170℃、200℃、230℃)对Sb_(2)(S,Se)_(3)薄膜性能及其太阳电池转化效率的影响,利用XRD、Raman、SEM、UV、光电化学测试对Sb_(2)(S,Se)_(3)薄膜结构与光电性能进行表征,并对制备的薄膜器件进行I-V特性曲线表征。由XRD衍射和Raman散射测试表明,硒化后的样品均掺入了Se原子。预热温度为200℃时,Sb_(2)(S,Se)_(3)的(120)、(130)、(230)衍射峰相对强度最大,表明晶体结晶质量提升的同时,具有一定取向。SEM表征发现,Sb_(2)(S,Se)_(3)薄膜的形貌以及薄膜表面平整度与前驱体的预热温度密切相关;合适的衬底预热温度(200℃)可以快速将有机溶剂分解挥发,使Sb_(2)S3前驱体薄膜迅速沉积在衬底表面。200℃时Sb_(2)(S,Se)_(3)薄膜光电性能最好,暗电流相对最平稳,此时带隙值为1.37 eV,制备出的太阳电池效率为0.386%。The influence of different preheating temperatures(140℃,170℃,200℃,230℃)on the properties of Sb_(2)(S,Se)_(3)thin film and the conversion efficiency of Sb_(2)(S,Se)_(3)thin film solar cells were studied in the paper.The Sb_(2)(S,Se)_(3)film structure and its photoelectric properties were characterized by X-ray diffraction(XRD),Raman scattering tests,scanning electronic microscope(SEM),ultra-violet spectrum(UV),photoelectrochemical tests,and the I-V characteristic curve of the devices derived from it was also determined.The results of XRD and Raman scattering tests showed that all the selenized samples were doped with Se atoms.When the preheating temperature was 200℃,the relative intensity of(120)、(130)and(230)diffraction peaks of Sb_(2)(S,Se)_(3)was the strongest,indicating that the crystal kept some degree of orientation while the crystal quality was improved.The SEM observation found that the morphology and the surface flatness of the film were closely related to the preheating temperature of the precursor.When the preheating temperature was too low,the organic matter in the film did not decomposed in time,however when it was too high,the volatilization of S element resulted in a large number of pores in the film.A suitable substrate preheating temperature(200℃)quickly decomposed and volatilized the organic solvent and the Sb_(2)S3 precursor film was deposited on the surface of the substrate accordingly.Analysis demonstrated that when the preheating temperature was 200℃,the photoelectric performance of the Sb_(2)(S,Se)_(3)thin film was the best and the dark current was relatively stable,and the band gap value of the film was 1.37 eV,the efficiency of the prepared solar cell was 0.386%.

关 键 词：溶胶凝胶法 预热温度 Sb_(2)(S Se)_(3)薄膜 光电性能 

分 类 号：O47[理学—半导体物理]