任意横向掺杂半导体功率器件的虚拟仿真实验教学  

Virtual simulation experimental teaching of semiconductor power device with arbitrary lateral doping

作　　者：李曼[1] 杨可萌 郭宇锋[1] 顾世浦[1] 姚佳飞 张珺 张茂林 LI Man;YANG Kemeng;GUO Yufeng;GU Shipu;YAO Jiafei;ZHANG Jun;ZHANG Maolin(State-Level Experimental Teaching Center for Electronic Science and Technology,National Virtual Simulation Experiment Teaching Center for Information Electronic Technology,College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China)

机构地区：[1]南京邮电大学集成电路科学与工程学院,信息电子技术国家级虚拟仿真实验教学中心,电子科学与技术国家级实验教学中心,江苏南京210023

出　　处：《实验技术与管理》2022年第4期104-110,共7页Experimental Technology and Management

基　　金：国家自然科学基金(61874059);江苏省在线开放虚拟仿真实验教学项目(SYS2017SXF03);南京邮电大学实验室工作研究课题(2021XSJ02)。

摘　　要：为了突破传统理论、数值模拟和实验教学的局限性,进一步提升教学质量,培养专业领域创新人才,建设了任意横向掺杂半导体功率器件的虚拟仿真实验教学资源。基于自主研发的任意横向掺杂设计工具miniVLD,对半导体工艺仿真软件、器件模拟软件和版图设计软件进行二次开发,包含掩模板设计、虚拟制造、虚拟测试、版图设计4部分。该虚拟仿真实验具备自主开发、理念先进、综合性、创新性和工程性强等优点,为复杂理论实践教学提供了典型案例。In order to break through the limitation of traditional theory,numerical simulation and experimental teaching,the virtual simulation experimental teaching resources of semiconductor power device with arbitrary lateral doping are constructed to further improve the quality of teaching and cultivate innovative talents in the professional field.Based on the self-developed arbitrary lateral doping design tool mini VLD,the semiconductor process simulation,device simulation software and layout design software are redeveloped,which consists of four parts including mask design,virtual manufacturing,virtual testing and layout design.The virtual simulation experiment has the advantages of independent development,advanced concept,strong comprehensiveness,innovation and engineering,which provides a typical case for the practice teaching of complex theory.

关 键 词：任意横向掺杂 半导体功率器件 掩模版设计 虚拟制造 虚拟测试 版图设计 

分 类 号：O-439[理学]