Sm掺杂Pb(Mg_(1/3)Nb_(2/3))O_(3)-PZT压电陶瓷的研究  

Study on Sm-Doped Pb(Mg_(1/3) Nb_(2/3))O_(3)-PZT Piezoelectric Ceramics

作　　者：汪跃群 项光磊 高亮 WANG Yuequn;XIANG Guanglei;GAO Liang(Hangzhou Applied Acoustics Research Institute,Hangzhou 310023,China)

机构地区：[1]杭州应用声学研究所,杭州310023

出　　处：《硅酸盐通报》2022年第4期1433-1439,共7页Bulletin of the Chinese Ceramic Society

摘　　要：本文通过一步反应合成法制备了铌镁-锆钛酸铅(Pb(Mg_(1/3) Nb_(2/3))O_(3)-Pb(Zr,Ti)O_(3),PMN-PZT)压电陶瓷,研究了稀土元素钐(Sm)掺杂对PMN-PZT(x%(摩尔分数)Sm-PMN-PZT)结构与电学性能的影响规律,得到了具有高压电性、高机电耦合系数和高居里温度的压电陶瓷。当x=2.0时,压电常数d_(33)=611 pC/N,机电耦合系数k_(p)=0.68,介电损耗tanδ=1.65%,相对介电常数ε_(r)=2650,居里温度T_(C)=283℃。测试压电陶瓷电致应变性能,在3 kV/mm下单极电致应变达到0.20%,显示出其大应变材料的特征。结果表明,Sm掺杂PMN-PZT压电陶瓷具有优异的综合电学性能,有望在换能器、传感器以及致动器等领域广泛应用。In this paper,the Pb(Mg_(1/3) Nb_(2/3))O_(3)-Pb(Zr,Ti)O_(3)(PMN-PZT)piezoelectric ceramics were prepared by one-step synthesis method.The effect of Sm-doping on the structure and electrical properties of PMN-PZT ceramics were investigated.High piezoelectric performances are achieved in 2.0%(mole fraction)Sm-PMN-PZT ceramics,which are piezoelectric constant d_(33)=611 pC/N,electromechanical coupling coefficient k_(p)=0.68,dielectric loss tanδ=1.65%,relative dielectric constantε_(r)=2650,along with a high Curie temperature T_(C)=283℃.Furthermore,a large unipolar strain of 2.0%Sm-PMN-PZT ceramics is attained to be 0.20%at the electric field of 3 kV/mm,which shows the characteristic of large strain material.These results suggest that the Sm-doped PMN-PZT ceramics with outstanding comprehensive properties are promising in the field of transducers,sensors,actuators,etc.

关 键 词：PMN-PZT压电陶瓷 稀土元素掺杂 压电性能 机电耦合系数 居里温度 大应变 

分 类 号：TM282[一般工业技术—材料科学与工程]