低温漂薄膜体声波谐振器研究  

Study on Thin Film Bulk Acoustic Resonator with Low Temperature Drift

作　　者：蒋世义[1] 蒋平英[1] 刘娅[1] 甄静怡 徐阳[1] 彭霄[1] 唐中剑 JIANG Shiyi;JIANG Pingying;LIU Ya;ZHEN Jingyi;XU Yang;PENG Xiao;TANG Zhongjian(The 26th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China;School of Artificial Intelligence,Chongqing Youth Vocational&Technical College,Chongqing 400712,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060 [2]重庆青年职业技术学院人工智能学院,重庆400712

出　　处：《压电与声光》2022年第2期171-174,共4页Piezoelectrics & Acoustooptics

基　　金：重庆市教委科学技术研究基金资助项目(KJQN201904106)。

摘　　要：该文介绍了一种基于空腔结构的温度补偿型薄膜体声波谐振器(TC-FBAR)。通过在压电层上方生长SiO_(2)温度补偿层,实现谐振器的低温漂。未采用温度补偿的薄膜体声波谐振器,其频率温度系数约为-25×10^(-6)/℃。通过适当的膜层结构设计,可使其频率温度系数在±3×10^(-6)/℃。结果表明,由于温度补偿层的增加,导致器件总体压电效应降低,使谐振器的有效机电耦合系数降低。低温漂谐振器的实现,为窄带低温漂滤波器的研制提供了有效的设计和工艺技术支撑。A temperature compensated thin film bulk acoustic resonator(TC-FBAR)based on cavity structure is introduced in this paper.By growing a temperature compensation layer(SiO_(2))above the piezoelectric layer,the low temperature drift of resonator has been realized.The temperature coefficient of frequency of thin film bulk acoustic resonator without temperature compensation is about-25×10^(-6)/℃.Through proper film structure design,the temperature coefficient of frequency can be controlled within±3×10^(-6)/℃.It is found that the overall piezoelectric effect of the device is reduced by adding a temperature compensation layer,resulting in the reduction of the effective electromechanical coupling coefficient.The realization of the low temperature drift resonator can provide supports of effective design and process for developing the narrow band filter with low temperature drift.

关 键 词：薄膜体声波谐振器(FBAR) 频率温度系数 低温漂 温度补偿 

分 类 号：TN65[电子电信—电路与系统] TN713