C波段WLP薄膜体声波滤波器的研制  

Development of C Band WLP Packaged FBAR

作　　者：刘娅 孙科[1] 马晋毅 谢征珍[2] 蒋平英[2] 杜雪松[2] LIU Ya;SUN Ke;MA Jinyi;XIE Zhengzhen;JIANG Pingying;DU Xuesong(University of Electronic Science and technology of China,Chengdu 610054,China;The 26th Institute of China Electronic Technology Group Corporation,Chongqing 400060,China)

机构地区：[1]电子科技大学材料与能源学院,四川成都610054 [2]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2022年第2期260-263,共4页Piezoelectrics & Acoustooptics

摘　　要：该文研制了一种晶圆级封装(WLP)的C波段薄膜体声波谐振器(FBAR)滤波器。采用一维Mason等效电路模型对谐振器进行设计,并使用HFSS对电磁封装模型进行优化,再在ADS中对滤波器进行仿真优化设计,得到阶梯型结构的FBAR滤波器。采用空腔型结构并制备出FBAR滤波器芯片,同时利用覆膜工艺对FBAR裸芯片进行覆膜和电镀等WLP工艺,得到WLP的FBAR器件。测试结果表明,滤波器的中心频率为6.09 GHz,中心插损为2.92 dB,通带插损为3.4 dB,带宽为112 MHz,带外抑制大于40 dB。A C band thin film bulk acoustic resonator(FBAR)filter packaged by WLP was developed in this paper.The one-dimensional Mason equivalent circuit model was used to design the resonator,the HFSS was used to optimize the electromagnetic packaging model,and then the filter was simulated and optimized in ADS to obtain the stepped FBAR filter.FBAR filter chip was fabricated by cavity structure,and WLP was carried out by taping and electroplating on FBAR bare chip.The test results showed that the center frequency of the filter was 6.09 GHz,the center insertion loss was 2.92 dB,the passband insertion loss was 3.4 dB,the bandwidth was 112 MHz,and the out-of-band rejection was greater than 40 dB.

关 键 词：薄膜体声波谐振器(FBAR) Mason模型 晶圆极封装(WLP) 覆膜 插入损耗 

分 类 号：TN65[电子电信—电路与系统]