横向PNP晶体管质子辐照损伤的缺陷间能级耦合机制  

Coupled Defect Level Mechanism of Lateral PNP Transistors Irradiated by Proton

作　　者：刘岩[1] 陈伟[1] 王忠明[1] 王茂成 王迪[1] 刘卧龙 王百川[1] 杨业 姚志斌[1] 郭晓强[1] 王晨辉[1] 白小燕[1] LIU Yan;CHEN Wei;WANG Zhongming;WANG Maocheng;WANG Di;LIU Wolong;WANG Baichuan;YANG Ye;YAO Zhibin;GUO Xiaoqiang;WANG Chenhui;BAI Xiaoyan(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China)

机构地区：[1]强脉冲辐射环境模拟与效应国家重点实验室,西北核技术研究所,西安710024

出　　处：《现代应用物理》2022年第1期75-82,共8页Modern Applied Physics

基　　金：基础加强计划重点基础研究资助项目(JQZD052003)。

摘　　要：为分析质子电离对位移损伤效应的影响机制,基于栅控电荷分离方法,对比分析了横向PNP晶体管3 MeV质子辐照与反应堆中子辐照位移损伤效应的差异,并对质子辐照后的长期退火特征进行了分析。通过对栅扫描峰值展宽机理的分析,提出了位移损伤深能级缺陷与界面浅能级缺陷之间的耦合机制。研究结果表明,当深能级与浅能级缺陷同时存在时,缺陷间的电荷转移将会显著加剧电子器件的载流子复合过程。Based on the gate-controlled charge separation method,the differences of displacement damage effects of lateral PNP transistors irradiated by 3 MeV proton and reactor neutron are compared and analyzed respectively,and the long-term annealing characteristics after proton irradiation are analyzed.By analyzing the peak broadening mechanism of gate scanning,the coupling mechanism between displacement damage deep level defects and interface shallow level defects is proposed.The results show that when deep level and shallow level defects exist at the same time,the charge transfer between defects will significantly increase the carrier recombination of electronic devices.

关 键 词：位移损伤 缺陷能级 质子辐照 中子辐照 横向晶体管 

分 类 号：TN32[电子电信—物理电子学] TL81[核科学技术—核技术及应用]