镀Zr高硼硅玻璃衬底上低温生长GaN薄膜研究  

Study on low-temperature growth of GaN films on Zr plated high borosilicate glass substrate

作　　者：王兴达 唐伟闻 秦福文[1] 刘爱民[1] WANG Xingda;TANG Weiwen;QIN Fuwen;LIU Aimin(State Key Laboratory for Materials by Laser,Ion and Electron Beams,Dalian University of Technology,Dalian,Liaoning 116024,China)

机构地区：[1]大连理工大学三束材料改性教育部重点实验室,辽宁大连116024

出　　处：《信息记录材料》2022年第3期16-20,共5页Information Recording Materials

摘　　要：实验采用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术,分别以高纯氮气(N2和三甲基镓(TMGa)作为氮源和镓源,改变TMGa流量,在镀锆(Zr)高硼硅玻璃衬底上低温沉积GaN薄膜,并利用反射高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)和室温光致发光(PL)谱对不同TMGa流量下沉积的GaN薄膜样品的结晶取向、内部应力、表面形貌以及光致发光性能进行了检测。结果表明,当TMGa流量为1.6sccm时,低温沉积得到的GaN薄膜呈现高度的a轴择优取向,结晶性较好,内部应力得到了一定程度的释放,表面形貌呈现岛状生长,且岛的大小比较均匀。GaN薄膜的室温光致发光峰发生了一定程度的红移。GaN films were deposited on zirconium plated high borosilicate glass substrates at low temperature by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD) technology,high purity nitrogen(N2) and Trimethylgallium(TMGa) were used as nitrogen and gallium sources respectively.With the increasement of the TMGa glow rate,the crystal orientation,internal stress,surface morphology and photoluminescence properties of GaN films were characterized experimentally by reflection high energy electron diffraction(RHEED),X-ray diffraction(XRD),Atomic force microscopy(AFM)and room temperature photoluminescence(PL) spectra.The results show that when the TMGa flow rate is 1.6 sccm,the GaN films deposited at low temperature show a high a-axis preferred orientation and good crystallinity,The internal stress is released to a certain extent,the surface morphology shows island growth,and the size of the island is relatively uniform.The room temperature photoluminescence peak of GaN film has a certain degree of red shift.

关 键 词：电子回旋共振-等离子体增强金属有机物化学气相沉积 Ga N 镀Zr高硼硅玻璃衬底 低温沉积 

分 类 号：TN304.2[电子电信—物理电子学]