蓝宝石衬底上AlGaN/GaN异质结的制备及性能研究  

Study on the preparation and properties of AlGaN/GaN heterostructure on sapphire substrate

作　　者：张法碧[1] 杨倩倩 梁智文 王琦 ZHANG Fabi;YANG Qianqian;LIANG Zhiwen;WANG Qi(School of Information and Communication Engineering,Guilin University of Electronic Technology,Guilin 541004,China;Dongguan Institute of Optoelectronics,Peking University,Dongguan 523808,China)

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004 [2]北京大学东莞光电研究院,广东东莞523808

出　　处：《桂林电子科技大学学报》2022年第1期8-13,共6页Journal of Guilin University of Electronic Technology

基　　金：国家自然科学基金(61764001);广西科技厅基地与人才专项(AD18281084);广西高校引进海外高层次人才“百人计划”(C66RXC040001);广西精密导航技术与应用重点实验室基金(DH201808);广东省重点领域研发计划(2020B010169001);广东省区域联合基金重点项目(2019B1515120091);广东省重点领域研发计划(2020B090922001)。

摘　　要：为了研究用MOCVD在蓝宝石衬底上制备的AlGaN/GaN异质结的性能,分别在成核温度为580℃和600℃的非故意掺杂GaN模板上制备了Al_(0.30)Ga_(0.70)N/GaN异质结构,并用光学显微镜和HRXRD等测试设备对其进行了表征,结果表明:与580℃的成核温度相比,在成核温度为600℃的非故意掺杂GaN模板上制备的Al_(0.30)Ga_(0.70)N/GaN异质结构的性能较好,其样品表面形貌较佳,GaN外延层的原位监测反射率曲线的振幅更均匀;HRXRD测试结果表明,其(002)面和(102)面的半高宽较小,分别为178、214rad·s^(-1),位错密度处于较低水平(螺型位错密度为6.24×10^(7)cm^(-2),刃型位错密度为4.1×10^(8)cm^(-2))。为进一步改善Al_(0.30)Ga_(0.70)N/GaN异质结构性能,研究了Al N插入层的影响,结果表明:带有Al N插入层的Al_(0.30)Ga_(0.70)N/AlN/GaN异质结构的2DEG面密度增加明显且处于较高水平,为3.014×10^(13)cm^(-2),带有AlN插入层的Al_(0.30)Ga_(0.70)N/AlN/GaN异质结构的平均方块电阻值为277.0Ω,明显低于无AlN插入层的Al_(0.30)Ga_(0.70)N/GaN的平均方块电阻值331.9Ω。以上结果表明,优化成核层温度和引入插入层能提高Al_(0.30)Ga_(0.70)N/GaN异质结构性能。In order to study the properties of AlGaN/GaN heterostructure grown on sapphire substrate by MOCVD system.Firstly,Al_(0.30)Ga_(0.70)N/GaN heterostructures materials were grown on the u-GaN template with the nucleation temperature of 580℃and 600℃.Samples are characterized by Optical microscope and HRXRD measurement.Experimental results show that the Al_(0.30)Ga_(0.70)N/GaN heterostructures was grown on the u-GaN template with the nucleation temperature of 600℃has better performance Compared with the nucleation temperature of 580℃.The surface morphology of the sample is bet-ter,and the amplitude of the reflectance curve of GaN epitaxial layer detected in situ is more uniform.The HRXRD measurement results show that the FWHM of the(002)and(102)plane are small(178 rad·s^(-1) and 214 rad·s^(-1),respectively),and the dislocation density is at a low level(the screw dislocation density is 6.24×10^(7)cm^(-2) and the edge dislocation density is 4.1×10^(8) cm^(-2)).The influence of AlN interlayer layer was studied in order to further improve the performance of Al_(0.30)Ga_(0.70)N/GaN heterostructure.Experimental results show that the 2DEG density of Al_(0.30)Ga_(0.70)N/AlN/GaN heterostructure increases obviously and at a high level,that is 3.014×10^(13)cm^(-2).Meanwhile,Al_(0.30)Ga_(0.70)N/AlN/GaN heterostructure with AlN interlayer displayed the average sheet resistance of 277.0Ωless than 331.9Ωof without AlN interlayer obviously.The above results show that optimizing the temperature of the nucleation layer and introducing the insertion layer are effective methods to improve the Al_(0.30)Ga_(0.70)N/GaN heterostructure performance.

关 键 词：成核层 位错密度 插入层 表面形貌 方块电阻 

分 类 号：TN303[电子电信—物理电子学]