基于异质结构忆阻器的研究进展  

Research Progress of Memristor Based on Heterostructure

作　　者：陈晓平[1] 楼玉民 赵宁宁 黄一君 胡海龙[1] 岳建岭[1] CHEN Xiaoping;LOU Yumin;ZHAO Ningning;HUANG Yijun;HU Hailong;YUE Jianling(School of Aeronautics and Astronautics,Central South University,Changsha 410083,China;Zhejiang Energy Group R&D Institute Co.,Ltd.,Hangzhou 310003,China;Zhejiang Key Laboratory of Research on High Efficiency Energy Saving and Pollutant Control Technology of Thermal Power Generation,Hangzhou 311121,China)

机构地区：[1]中南大学航天航空学院,长沙410083 [2]浙江浙能技术研究院有限公司,杭州310003 [3]浙江省火力发电高效节能与污染物控制技术研究重点实验室,杭州311121

出　　处：《材料导报》2022年第10期17-26,共10页Materials Reports

基　　金：国家自然科学基金(51775560);高温合金螺栓表面抗氧化涂层研究项目(JSYJY-JS-2019-059)。

摘　　要：忆阻器是当前最具应用前景的下一代非易失性存储器之一,在新型非易失性存储、逻辑运算和大脑神经功能模拟方面都展现出巨大的应用潜力。目前忆阻器阻变参数的弥散性和较差的器件重复性是制约其进一步发展的重要因素。采用异质结构的设计方法使组成材料的选择更加丰富多样,通过改变插入层厚度能够实现其结构和相对成分的灵活调控,同时材料内部构筑的界面异质结所产生的界面势垒、电荷诱捕效应等对忆阻器性能有额外附加调节作用,因而异质结构设计成为调控忆阻器性能和揭示忆阻器阻变机理的一种非常有效的方法。与单层氧化物忆阻器相比,异质结构的忆阻器在器件的功耗、稳定性和耐久性方面都有很大程度的改善,因此其在模拟人工突触和神经形态电路应用方面具有独特的优势。本文综述了异质结构忆阻器的最新研究进展,主要对异质结构忆阻器材料体系的选择与适配、器件结构设计、性质调控、机理以及应用进行了介绍,指出了目前异质结构忆阻器研究中需要关注的主要问题。本文有望为异质结构忆阻器的设计、制备和应用提供参考及借鉴。Memristor is one of the most promising next-generation non-volatile memories,showing great application potential in new non-volatile storage,logic operation and brain nerve function simulation.At present,due to the dispersion of memristor resistance changing parameters as well as poor device repeatability,further development has been seriously hindered.The selected materials in constituent are becoming more abundant and diverse owing to the varied heterogeneous structural design methods.The structure and relative composition of heterostructure can be tuned with great flexibility through changing the thickness of the inserted layer.On the other hand,the interface barriers and charge trapping effects induced by the artificially constructed interface heterojunction inside the material have been placing additional adjustments to the improved performance of the memristor,which is believed to be a very effective method for regulating the performance of memristors and revealing the mechanism of memristor resistance changes.By studying heterostructure memristors,it is acknowledged that the power consumption of a single device,the stability of a device,and the durability of a device have a pronounced improvement compared to that of single-layer oxide devices.The heterostructural memristor has unique advantages in simulating artificial synapse and neuromorphic circuit applications.This work summarizes the latest research progress of heterostructural memristors,including the selection and suitability of material system,device structural design,property,mechanism and its potential application,and the limitations of current study are pointed out.This review aims to offer a certain basis for the structural design,preparation and application of heterostructure memristors.

关 键 词：忆阻器 异质结构 开关特性 阻变机制 人工突触 

分 类 号：TM23[一般工业技术—材料科学与工程]