基于台阶刻蚀工艺的GaInP/GaAs/Ge太阳电池激光划片研究  

Laser wafer dicing process of GaInP/GaAs/Ge solar cells based on mesa groove etching

作　　者：许军 铁剑锐 孙希鹏 康洪波 XU Jun;TIE Jianrui;SUN Xipeng;KANG Hongbo(Tianjin Hengdian Space Power Co.,Ltd.,Tianjin 300384,China;Information Engineering College,Hebei University of Architecture,Zhangjiakou Hebei 075000,China)

机构地区：[1]天津恒电空间电源有限公司,天津300384 [2]河北建筑工程学院信息工程学院,河北张家口075000

出　　处：《电源技术》2022年第5期549-551,共3页Chinese Journal of Power Sources

摘　　要：通过湿法台阶刻蚀工艺,在GaInP/GaAs/Ge太阳电池晶圆上按设计尺寸做成切割槽,继而采用皮秒或纳秒激光划切晶圆衬底,完成尺寸误差低于10μm的电池切割,该工艺制备的太阳电池性能与金刚石砂轮划片效果等同。和金刚石砂轮划片工艺相比,激光划片具有速度快、切割图形多样、维护周期短等优点。Through a wet etching process,a cutting groove was made on GaInP/GaAs/Ge wafer according to the required size,and then the substrate was cut by picosecond laser or nanosecond laser with the dimensional error less than 10μm.The solar cells obtained by this process was equivalent to a diamond saw dicing process,compared with diamond saw dicing technology,laser wafer dicing technology had the advantages of high speed,various cutting patterns,short maintenance cycle and so on.

关 键 词：台阶刻蚀 激光划片 热效应 

分 类 号：TM914[电气工程—电力电子与电力传动]