含难熔金属碳化硅陶瓷先驱体研究进展  

Research Progress on Refractory Metal-Containing Precursors for SiC Ceramics

作　　者：宋辉煌 熊汗青 李锟 SONG Huihuang;XIONG Hanqing;LI Kun(School of Mechanical&Electrical Engineering,Changsha University,Changsha 410022,Hunan)

机构地区：[1]长沙学院机电工程学院,长沙410022

出　　处：《有机硅材料》2022年第3期69-73,共5页Silicone Material

基　　金：国家自然科学基金青年资助项目(19902050);湖南省优秀青年基金(18B418)。

摘　　要：介绍了碳化硅陶瓷高温失效原理,归纳了难熔金属元素在碳化硅陶瓷中的作用,包括在先驱体合成中作为交联助剂、抑制碳化硅晶粒高温下的生长、作为氧化产物的固溶体。重点综述了含难熔金属元素碳化硅陶瓷先驱体的3种合成方法:金属氯化物脱氯法、烷氧基金属化合物反应法和硅氢加成反应法。展望了含难熔金属碳化硅陶瓷先驱体未来的发展方向。The high temperature failure principle of silicon carbide ceramics has been introduced, and the role of refractory metal elements in silicon carbide ceramics is summarized, including as crosslinking additives in precursor synthesis, inhibiting the growth of silicon carbide grains at high temperature, and as solid solutions of oxidation products. Three synthetic methods of silicon carbide ceramic precursors containing refractory metal elements are reviewed, i.e. dechlorination of metal chlorides, metal alkoxides and reactive hydrosilylation. The future development direction of silicon carbide ceramic precursor containing refractory metal is prospected.

关 键 词：碳化硅 难熔金属 耐高温陶瓷 先驱体转化法 抗氧化 

分 类 号：TQ343.6[化学工程—化纤工业]