功率场效应管在变换电路中的热耗研究  

Study on Heat Consumption of Power FET in Conversion Circuit

作　　者：王秀 张晋辉 WANG Xiu;ZHANG Jin-hui(Jinzhong University,Jinzhong 030619,China)

机构地区：[1]晋中学院,山西晋中030619

出　　处：《机械工程与自动化》2022年第3期186-188,共3页Mechanical Engineering & Automation

基　　金：山西省基础研究计划资助项目(20210302124308);晋中学院技术创新团队建设计划资助项目(jzxyjscxtd202107)。

摘　　要：功率场效应管(MOSFET)作为变换电路中的核心器件,起到电压通断的作用,从而完成电路的开通和关闭。详细论述了MOSFET的热阻特性和热耗,并结合实例,完成了在MOSFET上增加散热片前、后的温升变化对比实验,证实非绝缘封装MOSFET在增加散热片后可有效降低器件本体的温度升高,因此在使用MOSFET时应选用合适的散热器件。Power field effect transistor(MOSFET),as the core device in the conversion circuit,plays the role of voltage on and off,so as to complete the opening and closing of the circuit.In this paper,the thermal resistance characteristics and heat consumption of MOSFET are discussed in detail.Combined with an example,the comparative test verification of temperature rise changes before and after adding heat sink is completed,which is confirmed that the non insulated packaged MOSFET can effectively reduce the temperature increase of the device body after adding the heat sink.Therefore,the MOSFET should choose the appropriate heat sink when in use.

关 键 词：变换电路 热耗分析 功率场效应管 

分 类 号：TN624[电子电信—电路与系统]