碲锌镉晶体Cd源控制生长技术研究  

Study on the growth technology of CdZnTe crystal with Cd reservoir controlled

作　　者：刘江高 李轩 徐强强[1] 范叶霞[1] 侯晓敏[1] 刘铭[1] 吴卿[1] LIU Jiang-gao;LI Xuan;XU Qiang-qiang;FAN Ye-xia;HOU Xiao-min;LIU Ming;WU Qing(North China Research Institute of Electro-Optic,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2022年第5期730-733,共4页Laser & Infrared

摘　　要：针对碲锌镉(CdZnTe)晶体中二次相缺陷问题,Cd源控制生长技术是更为有效的缺陷抑制技术。本文结合模拟仿真与实际测温调温,对比了VB法以及VGF法下Cd源处温度的可控性。在实现Cd源处温度控制基础上研究了不同Cd源处温度控制条件对晶体二次相缺陷尺寸及分布的影响。VB法中,Cd源处控制温度快速下降,晶体尾端出现三角形Te夹杂缺陷。VGF法中,在Cd源控制温度达到820~790℃范围内时,虽然晶体头部中心部分二次相缺陷问题改善效果一般,但晶体边缘及尾部二次相缺陷问题能够得到了极大改善。The growth technology with Cd reservoir controlled is the most effective method to solve second-phase defects problem in CdZnTe crystal.With numerical simulation and experimental adjustment,the controllability of the temperature of Cd reservoir in VB case and in VGF case is compared in this paper.On the basis of the temperature of Cd reservoir controlled designedly,the influences of the temperature of Cd reservoir on the size and distribution of second-phase defects are researched.In VB case,the temperature of Cd reservoir decreased greatly.As a result,some tellurium triangle-like defects with a size which could reach a few microns are observed in the tale of the ingot.For the ingots growth by VGF method,when the temperature of Cd reservoir is controlled in the range of 820~790℃,although the second-phase defects in the top mid of the ingot is generally improved,the tale and edgy of the ingot can be greatly improved.

关 键 词：碲锌镉晶体 Cd源控制晶体生长 

分 类 号：TN213[电子电信—物理电子学]