非晶硅TFT强光稳定性的研究及改善  

Study and Amelioration of the High-Brightness Stability of Amorphous Silicon TFT

作　　者：张亚军 叶发科 陆磊 Simon Han Gilbert Seo ZHANG Yajun;YE Fake;LU lei;HAN S;SEO G(Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.,Ltd.,Shenzhen 518132,China;Peking University Shenzhen Graduate School,Shenzhen 518071,China)

机构地区：[1]深圳市华星光电半导体显示技术有限公司,广东深圳518132 [2]北京大学深圳研究生院,广东深圳518071

出　　处：《现代信息科技》2022年第2期43-47,共5页Modern Information Technology

基　　金：深圳基础研究项目(JCYJ20200109140601691);深港联合-协同创新专项(SGDX20190918105001787)。

摘　　要：随着显示产业的迅猛发展,大尺寸、宽色域、高动态范围(HDR)和高亮度给薄膜晶体管(TFT)面板带来了更大的挑战。经过测试,在40000 nit高亮度背光照明下,经过500小时照明,面板的充电能力衰减幅度高达13%。其机理与TFT结构密切相关,如栅极的功函数和栅极绝缘层(GI)的光学带隙(E_(g))。经研究,通过将GI层光学带隙从4.1 eV提升到4.7 eV,高亮度应力下衰减幅度从13%改善到了1%以下。Along with the rapid development of display industry,large size,wide color gamut,high dynamic range(HDR),and high light bring greater challenges to the thin-film transistor(TFT)backplane.After testing,under the illumination of back light with a high brightness of 40000 nits,the range of decay of the backplane charging ability is up to 13%after illumination 500 hours.The mechanism is highly related with the architectures of TFT,such as the work function of gate electrode and optical band gap(E_(g))of gate insulation(GI).After the study,by enlarging the optical band gap of GI from 4.1 eV to 4.7 eV,the range of decay has ameliorated from 13%to less than 1%under high-brightness stress.

关 键 词：LCD a-Si TFT PECVD 高亮度 

分 类 号：TN141[电子电信—物理电子学]