W波段直板型电容式MEMS开关设计  

Design of W-band straight plate capacitive MEMS switch

作　　者：曹钎龙 吴倩楠 韩路路[1,2,3] 王宇 李孟委 CAO Qianlong;WU Qiannan;HAN Lulu;WANG Yu;LI Mengwei(Nantong Institute of Intelligent Opto-Mechatronics of North University of China,Nantong 226000,China;School of Instrument and Electronics,North University of China,Taiyuan 030051,China;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051,China)

机构地区：[1]中北大学南通智能光机电研究院,江苏南通226000 [2]中北大学仪器与电子学院,山西太原030051 [3]中北大学前沿交叉科学研究院,山西太原030051

出　　处：《传感器与微系统》2022年第6期74-77,共4页Transducer and Microsystem Technologies

基　　金：装备发展部新品项目(2018NW0026,2019NW0010);中北大学青年学术带头人项目(QX201905)。

摘　　要：针对卫星通信、6G通信、物联网技术等射频前端系统对电子元器件高频工作性能的需求,设计了一种工作在W波段的直板型电容式射频(RF)单刀双掷开关。通过优化介电层材料和开关电极之间的空气间隙,降低了插入损耗、提高了隔离度等射频性能指标。利用HFSS电磁仿真软件对开关性能进行了数值模拟计算,仿真结果表明:所设计射频单刀双掷MEMS开关在80~100 GHz范围内,其插入损耗小于1.7 dB,隔离度大于40 dB,开关整体尺寸约为1.6 mm×1.6 mm。此开关能够满足射频系统前端对高频电子元器件的性能需求,在微波测试仪器、新一代通信系统中具有一定的应用价值。In view of the demand for high frequency operation performance of electronic components in RF front-end systems such as satellite communication,6G communication and Internet of Things technology,a straight plate capacitive RF SPDT switch operating in W-band is designed.By optimizing the air gap between the dielectric layer material and the switching electrode,the insertion loss is reduced and the isolation is improved.HFSS electromagnetic simulation software is used,numerical simulation calculation of switch performance is carried out.Simulation results show that the designed RF single-knife dual-throw MEMS switch is in the range of 80~100 GHz,its insertion loss is less than 1.7 dB,the isolation is greater than 40 dB,and the overall size of the switch is about 1.6 mm×1.6 mm.This switch can meet the performance requirements of RF system front-end for high-frequency electronic components,and has certain application value in microwave test instruments and new generation communication systems.

关 键 词：射频微机电系统 W波段 单刀双掷 插入损耗 隔离度 卫星通信 

分 类 号：TN389[电子电信—物理电子学]