MPCVD制备金刚石薄膜的工艺研究  

Research on the process of diamond thin film reparation by MPCVD

作　　者：孙洪涛 林晶[1] 赵丽丽[1] 钱博 SUN Hongtao;LIN Jing;ZHAO Lili;QIAN Bo(School of Light Industry Harbin University of Commerce,Harbin 150028,Heilongjiang,China;Dongguan Depai Precision Machinery Co.,Ltd.,Dongguan 523000,Guangdong China)

机构地区：[1]哈尔滨商业大学轻工学院,黑龙江哈尔滨150028 [2]东莞市德派精密机械有限公司,广东东莞523000

出　　处：《超硬材料工程》2022年第1期26-31,共6页Superhard Material Engineering

基　　金：哈尔滨商业大学青年创新人才计划(18XN032)。

摘　　要：金刚石薄膜具有诸多优异的性能,在精密加工、半导体、散热器件、光电学等方面具有许多应用,不过现代制备金刚石薄膜的工艺依然存在沉积的速率慢、品质差等问题。简述金刚石薄膜的制备原理和制备机理,探究MPCVD制备金刚石薄膜的原理,通过近年来科研人员的研究成果来分析金刚石薄膜的制备工艺对其沉积速率和品质等方面产生的影响。其中,主要分析形核方式、CH_(4)/H_(2)比、Ar掺杂、沉积温度、沉积气压等工艺参数的差异对金刚石薄膜制备过程中活性基团的种类和浓度产生的影响。Diamond thin film has many excellent properties and has many applications in precision machining, semiconductor, heat dissipation device, optoelectronics, etc. However, modern process for preparing diamond thin film still has problem such as slow deposition rate and poor quality. The preparation principle and preparation mechanism of diamond thin film are briefly described, and the principle of preparing diamond thin film by MPCVD is explored. Through the research results of researchers in recent years, the influence of the preparation process of diamond thin film on its deposition rate and quality is analyzed. Among them, the influence of the difference of process parameters such as nucleation method, CH_(4)/H_(2) ratio, Ar doping, deposition temperature, deposition pressure, etc. on the type and concentration of active groups during the preparation of diamond film is mainly analyzed.

关 键 词：金刚石薄膜 MPCVD 制备工艺 沉积速率 品质 

分 类 号：TQ164[化学工程—高温制品工业]