光刻投影物镜畸变检测技术  

Measurement Techniques for Distortion of Lithography Projection Objective

作　　者：曹译莎 唐锋[1,2] 王向朝 刘洋[1,2] 冯鹏 卢云君[1,2] 郭福东 Cao Yisha;Tang Feng;Wang Xiangzhao;Liu Yang;Feng Peng;Lu Yunjun;Guo Fudong(Laboratory of Information Optics and Optoelectronic Technology,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海光学精密机械研究所信息光学与光电技术实验室,上海201800 [2]中国科学院大学材料科学与光电工程中心,北京100049

出　　处：《激光与光电子学进展》2022年第9期206-222,共17页Laser & Optoelectronics Progress

基　　金：国家科技重大专项(2017ZX02101006)。

摘　　要：光刻投影物镜的畸变是影响光刻机套刻精度最重要的因素之一,畸变会导致物镜的横向放大率随视场的增大而变化,曝光到硅片上的图形相对于其理想位置发生偏移,从而引起套刻误差。在物镜的装调和使用过程中都需要对畸变进行检测和优化调整,而目前高端光刻投影物镜的畸变小于1 nm,对其进行高精度检测是该领域的难点。对三种常用的光刻机畸变检测技术(曝光检测、空间像检测和波前检测)的原理和特点进行了分析,并对其发展方向进行了展望。对于16~19 nm及16 nm以下的光刻节点,多通道检测技术是提高畸变检测精度与速度的重要发展方向。One of the most critical elements influencing lithography overlay accuracy is the distortion of the lithography projection objective.The distortion causes transverse magnification of the objective to change with the increase in the field of view,and the pattern exposed on the silicon wafer is displaced relative to its ideal position,which causes overlay errors.During the alignment and use of the objective,distortion must be detected and optimized.At present,the distortion of advanced lithography projection optics is less than 1 nm,and its highprecision measurement is a difficult point in this field.This paper examines the principles and characteristics of three widely used lithography distortion detection technologies-exposure measurement,aerial image measurement,and wavefront measurement-as well as their future development potential.To increase the accuracy and speed of distortion detection,multichannel detection technology is an important development path for lithography nodes of 16‒19 nm and below 16 nm.

关 键 词：测量与计量 光刻术 畸变检测 曝光 空间像传感器 相位测量干涉仪 

分 类 号：O439[机械工程—光学工程] TN305.7[理学—光学]