钒掺杂Cd_(0.9)Mn_(0.1)Te晶体生长与深能级缺陷研究  

Growth and Deep Level Defects of V-Doped Cd_(0.9)Mn_(0.1)Te Crystal

作　　者：游思伟 艾涛[1] 栾丽君[1] You Siwei;Ai Tao;Luan Lijun(School of Materials Science and Engineering,Chang’an University,Xi’an 710061,China)

机构地区：[1]长安大学材料科学与工程学院,陕西西安710061

出　　处：《稀有金属材料与工程》2022年第5期1873-1878,共6页Rare Metal Materials and Engineering

基　　金：陕西省重点研发计划﹣国际科技合作项目(2020KWZ-008)。

摘　　要：CdMnTe(碲锰镉)材料作为新一代的半导体材料,在核辐射探测领域具有很高的应用价值。本实验采用Te溶液垂直布里奇曼法生长Cd_(0.9)Mn_(0.1)Te:V晶体,研究其光电性能及深能级缺陷的分布。紫外-可见-近红外光谱分析表明晶锭中部和尾部的禁带宽度分别为1.602和1.597 eV。光致发光谱中,晶体的(D^(0),X)峰形尖锐,半峰宽较小,表明缺陷或杂质含量低,晶体质量好。室温I-V测试晶锭中部和尾部晶体电阻率分别为2.85×10^(10)和9.54×10^(9)Ω·cm,漏电流分别为3和8.5 nA。霍尔测试表明晶体导电类型为n型。通过热激电流谱研究了Cd_(0.9)Mn_(0.1)Te:V晶体中缺陷的能级和浓度,其中晶锭中部和尾部样品中源于Te反位(Te_(Cd)^(2+))的深施主能级(E_(DD))的值分别为0.90和0.812 eV。并且深施主能级E_(DD)使费米能级位于禁带中央,从而使晶体呈现高电阻率。As a new generation of semiconductor materials,CdMnTe material has high application value in the field of nuclear radiation detection.In this research,Te solution vertical Bridgman method was used to grow Cd_(0.9)Mn_(0.1)Te:V crystal to study the optical and electrical properties and the distribution of deep-level defects of the Cd_(0.9)Mn_(0.1)Te:V crystal.UV-VIS-NIR spectroscopy analysis shows that the band gap in the middle and tail of the ingot is 1.602 and 1.597 eV.The photoluminescence spectral analysis shows that the(D^(0),X)peak of the crystal is sharp and the half-width is small,indicating that the defect or impurity content is low and the crystal quality is superior.The room temperature I-V test shows that the resistivities of the middle and tail crystals are 2.85×10^(10) and 9.54×10^(9)Ω·cm,and leakage currents are 3 and 8.5 nA,respectively.The Hall test shows that the conductivity type of the crystal is n-type.The energy of the trap peak and the defect concentration in the Cd_(0.9)Mn_(0.1)Te:V crystal were studied by heat induced current spectroscopy.The values of the deep donor levels(E_(DD))derived from the Te_(Cd)^(2+) in the middle and tail samples of the ingot are 0.90 and 0.812 eV,respectively.The deep donor level E_(DD) makes the Fermi level in the center of the forbidden band and thus the crystals present a high resistivity.

关 键 词：Cd_(0.9)Mn_(0.1)Te:V 深能级缺陷 深施主能级 费米能级 

分 类 号：TG145[一般工业技术—材料科学与工程] TN304[金属学及工艺—金属材料] O771[金属学及工艺—金属学] O782.1[电子电信—物理电子学]