低能氮离子注入诱变大肠杆菌对多粘菌素B的耐药研究  

Drug Resistance of Escherichia Coli Mutated by the Implantation of Low Energy Nitrogen Ion to Polymyxin B

作　　者：蔡长龙[1] 王婷 唐朝 钱卫东 CAI Changlong;WANG Ting;TANG Chao;QIAN Weidong(School of Optoelectronic Engineering,Xi’an Technological University,Xi’an 710021,China;College of Food and Biological Engineering,Shaanxi University of Science&Technology,Xi’an 710021,China)

机构地区：[1]西安工业大学光电工程学院,西安710021 [2]陕西科技大学食品与生物工程学院,西安710021

出　　处：《西安工业大学学报》2022年第3期217-222,共6页Journal of Xi’an Technological University

基　　金：国家自然科学基金面上项目(11975177)

摘　　要：针对多粘菌素的耐药问题,文中通过低能N^(+)注入诱变筛选对多粘菌素B(PB)耐药的大肠杆菌突变菌株,通过测定突变耐药菌株耐药表型的变化,结合16S rRNA序列和多重耐药转移蛋白(MdtM)基因表达差异分析,从而研究低能N^(+)注入对大肠杆菌16S rRNA进化及其耐药性的影响。研究结果表明:筛选出3株对多粘菌素B耐药的菌株,其对多粘菌素B的耐药指数分别为4~16倍,16S rRNA的突变率达到0.2%~8.1%,且高突变率的多重耐药菌株25922 PB1中MdtM基因表达上调;低能N^(+)注入可能通过引发大肠杆菌16S rRNA基因突变和耐药相关基因表达量改变进而影响菌株耐药特性。结论可为探索大肠杆菌的多粘菌素耐药性形成机制研究提供参考。The paper studies the drug resistance of Escherichia coli to polymyxin.Low energy N^(+)was implanted into E.coli and then the E.coli mutants resistant to polymyxin B were obtained.By determining the drug resistance phenotype,16S rRNA sequence and MdtM gene expression of mutant drug resistant strains,the effect of low energy N^(+)implantation on the 16S rRNA evolution and drug resistance of E.coli was studied.Three strains resistant to polymyxin B were screened out,whose resistance indexes(RI)to polymyxin B were 4~16 times respectively,and the mutation rate of 16S rRNA was 0.2%~8.1%.The MdtM gene expression was up regulated in the mutant resistant strain 25922 PB1.The results showed that low energy N^(+)implantation may affect the drug resistance of Escherichia coli by inducing 16S rRNA gene mutation and the expression of resistance related genes.This study provides reference for exploring the formation mechanism of the resistance of Escherichia coli to polymyxin.

关 键 词：低能氮离子注入 多粘菌素B 大肠杆菌 耐药性 

分 类 号：Q933[生物学—微生物学]