具有短程抑制特性的超低功耗全碳质子突触器件  

An Ultralow Energy All-carbon Proton Synapse with Short-term Depression

作　　者：徐慧文 竺臻楠 胡令祥 李俊[1] 俞家欢 卢焕明[1] 张莉 王敬蕊 诸葛飞[1,2,3] XU Huiwen;ZHU Zhennan;HU Lingxiang;LI Jun;YU Jiahuan;LU Huanming;ZHANG Li;WANG Jingrui;ZHUGE Fei(Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Center for Excellence in Brain Science and Intelligence Technology,Chinese Academy of Sciences,Shanghai 200031,China)

机构地区：[1]中国科学院宁波材料技术与工程研究所,浙江宁波315201 [2]中国科学院大学材料科学与光电研究中心,北京100049 [3]中国科学院脑科学与智能技术卓越创新中心,上海200031

出　　处：《材料科学与工程学报》2022年第3期396-405,483,共11页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(61674156,61874125,51702336);中国科学院战略性先导科技专项资助项目(XDB32050204);浙江省自然科学基金资助项目(LD19E020001);宁波市自然科学基金资助项目(2018A610019);复旦大学专用集成电路与系统国家重点实验室开放课题资助项目(2018KF002)。

摘　　要：短程突触可塑性保证了对神经形态计算系统中神经信息处理和短程记忆的动态调节。短程易化特性(STF)在多种人工突触器件中被广泛报道,与之相比短程抑制特性(STD)的研究则进展缓慢,仅有为数不多的器件表现出STD特性,并且其单个刺激下的功耗比生物突触(1~10 fJ)高出许多。本研究提出了一种室温下通过溶液法制备的新型石墨烯/氧化石墨烯/石墨烯(G/GO/G)质子突触器件,该器件在几十毫伏的连续脉冲电压刺激下表现出电导逐渐下降的特性,这种特性源于质子在GO/G界面处连续积累导致的逐渐增强的反向质子电流。G/GO/G器件可以很好地模拟STD突触特性。由于操作电压和电流极小,器件单个刺激下的最低功耗可低至几十阿焦,此超低功耗特性有助于解决散热问题从而实现高度集成的神经形态电路。因此,全碳结构器件在脑内植入神经假体领域有很好的应用前景。Short-term synaptic plasticity allows for dynamic regulation of neural information processing and short-term memory in neuromorphic computing systems.Short-term facilitation(STF)is widely reported in various artificial synapses.Compared to STF,the progress of short-term depression(STD)is far slower.Only several electronic devices show STD with energy dissipation much higher than that of biological ones(1-10 fJ/spike).Here,a novel graphene/graphene oxide/graphene(G/GO/G)proton device is developed by a room-temperature solution processing technique.The device conductance demonstrates a decreasing trend upon successive voltage pulses of several tens of millivolts,due to a continued accumulation of protons at the GO/G interface thus causing an increasing reverse proton current.G/GO/G can serve as an excellent emulator for synaptic STD.Thanks to the low operating voltage and current,the minimum energy needed is only several tens of attojoules/spike.This ultralow energy artificial synapse makes it possible to develop high density neuromorphic circuits,since the heat dissipation problem can be overcome.Therefore,the devices with all-carbon structure show a promising application prospect in the field of brain implantable neuroprostheses.

关 键 词：人工突触 氧化石墨烯 全碳 超低功耗 短程抑制 

分 类 号：TN804[电子电信—信息与通信工程]