重离子单粒子辐射对超薄栅氧化层可靠性影响分析  

Influence of SEE with Heavy Ions on Reliability of Ultra‑thin Gate Oxide Layer

作　　者：何玉娟 雷志锋[2] 张战刚[2] 章晓文[2] 杨银堂[1] HE Yujuan;LEI Zhifeng;ZHANG Zhangang;ZHANG Xiaowen;YANG Yintang(Microelectronics Institute,Xidian University,Xi’an,710071,CHN;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou,510610,CHN)

机构地区：[1]西安电子科技大学微电子学院,西安710071 [2]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术国家重点实验室,广州510610

出　　处：《固体电子学研究与进展》2022年第2期141-145,共5页Research & Progress of SSE

摘　　要：研究了重离子单粒子辐照(Single event effect,SEE)效应对超薄栅氧化层(1.2 nm厚度)的斜坡击穿电压(Voltage ramp dielectric breakdown,VRDB)的影响情况。采用^(209)B(i离子能量为1043.7 MeV)对65 nm CMOS电容进行(1~2)×10^(7) ion/cm^(2)总注量的重离子辐射试验,并在辐射过程中进行VRDB试验。试验结果发现,经过^(209)Bi重离子辐射后,超薄栅CMOS电容的泄漏电流略微增大,跨导-电压曲线稍有畸变;进行累积模式和反型模式的斜坡击穿测试,发现栅氧化层的斜坡击穿电压减小近5%。通过扫描电子显微镜(SEM)检查发现,重离子辐照后栅氧化层中形成微泄漏路径,导致其击穿电压降低,并强烈影响超薄栅氧化层的长期可靠性。The influence of single event effect(SEE)with heavy ion on voltage ramp dielectric breakdown(VRDB)voltage of ultra-thin gate oxide layer(1.2 nm thickness)was studied in this paper.The SEE test with(1~2)×10^(7) ion/cm^(2) total flux was performed for 65 nm CMOS capacitors using ^(209)Bi ions(ion energy was 1043.7 MeV),and then VRDB test was performed during SEE test.The results show that the leakage current of the ultra-thin gate oxide in CMOS capacitor increase slightly and the transconductance-voltage(G_(m)-V)curve is slightly distorted after the ^(209)Bi heavy ion radiations.The cumulative and inverse VRDB test show that the VRDB voltage of the gate oxide layer decreases by nearly 5%.It is found that micro-leakage path can be formed in that gate dielectric layer after heavy ion radiation with scanning electron microscopy(SEM)test,thereby reducing the breakdown voltage and strongly affecting the long term reliability of the ultra-thin gate dielectric layer.

关 键 词：重离子单粒子辐射 VRDB试验 超薄栅氧化层 

分 类 号：TN306[电子电信—物理电子学]