主族层状低维半导体的偏振光探测器  

Polarization-sensitive photodetectors based on main group layered low-dimensional semiconductors

作　　者：赵凯[1] 魏钟鸣 夏建白[1] Kai Zhao;Zhongming Wei;Jianbai Xia(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]中国科学院半导体研究所,半导体超晶格国家重点实验室,北京100083

出　　处：《科学通报》2022年第16期1796-1805,共10页Chinese Science Bulletin

基　　金：国家杰出青年科学基金(62125404)资助。

摘　　要：偏振探测在成像、遥感和生物检测等领域具有非常广泛的应用.为了契合光电领域高度集成化的发展目标,偏振光探测器的器件结构需要跳出复杂的检偏器与探测器分离式结构模型,开发新型探测路线.对偏振光天然敏感的主族层状低维半导体可实现直接偏振光探测,实现探测结构的简化.基于Ⅳ族锗系和锡系的低对称性层状半导体在短波近红外具有较高的光响应以及偏振灵敏度,并且基于二维GeSe的偏振光探测器已经实现对近红外实物的二维式扫描偏振成像.基于Ⅴ族锑系和铋系的层状半导体在可见光波段具有较宽的光谱响应以及低的探测噪声,也已实现偏振成像.基于该两类主族层状低维半导体的偏振成像为未来偏振图像传感技术提供了一种简洁可行的思路.Polarization-sensitive photodetection is widely used in imaging,remote sensing,and biological detection.In order to meet the development goal of high integration in the photoelectric field,the polarization-sensitive photodetector structure needs to jump out of the complex structure model of separating polarizer and detector and develop a new detection route.The main group layered low-dimensional semiconductors,which are naturally sensitive to polarized light,can realize directly polarization-sensitive photodetection and simplify the detection structure.Here we summarize some polarization-sensitive photodetectors based on main group layered low-dimensional semiconductors,point out the shortcomings and give suggestions for future development.Low-symmetry layered semiconductors based on Group IV germanium and tin systems have high optical response and polarization sensitivity in short-wave near-infrared.At 808 nm,Ge Se has a dichroic ratio of 3.02 and an anisotropic photocurrent ratio of 2.16.In particular,the polarization-sensitive photodetector based on two-dimensional Ge Se has realized two-dimensional scanning polarization imaging of near-infrared objects.The Ge Se-based photodetector can identify the U-shaped heat pipe’s polarization angle with a high degree of recognition.In addition,we also prepared a GeSe;-based polarization-sensitive photodetector to extend the detection range to the ultraviolet band.The Ge As-based photovoltaic polarization-sensitive photodetector with low absorption dichroic ratio(1.42)has high anisotropic photocurrent ratio(4.4)under near-infrared range,which reveals the importance of the Schottky junction.The polarization-sensitive photodetection based on IV group layered 2D semiconductors inspired us to investigate the polarization-sensitive photodetection based on some V group layered 1D semiconductors.Such semiconductors are mainly composed of antimony and bismuth-based nanowires based on Group V.The constituent elements of these semiconductors are mainly antimony,bismuth of Group

关 键 词：主族元素 低维半导体 偏振光探测器 偏振成像 

分 类 号：O436.3[机械工程—光学工程]