Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications  

作　　者：Wen-Lu Yang Lin-An Yang Fei-Xiang Shen Hao Zou Yang Li Xiao-Hua Ma Yue Hao 杨文璐;杨林安;申飞翔;邹浩;李杨;马晓华;郝跃(State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071,China)

机构地区：[1]State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071,China

出　　处：《Chinese Physics B》2022年第5期738-742,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61974108 and 61674117);the National Natural Science Foundation for Young Scholars of China(Grants No.61804119);the Postdoctoral Science Foundation of China(Grants No.2018M643576)。

摘　　要：A GaN-based high electron mobility transistor(HEMT)with p-GaN islands buried layer(PIBL)for terahertz applications is proposed.The introduction of a p-GaN island redistributes the electric field in the gate–drain channel region,thereby promoting the formation of electronic domains in the two-dimensional electron gas(2DEG)channel.The formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD software.Simulation results show that the 0.2µm gate HEMT with a PIBL structure having a p-GaN island doping concentration(Np)of 2.5×10^(18)cm^(−3)–3×10^(18)cm^(−3)can generate stable oscillations up to 344 GHz–400 GHz under the gate–source voltage(V_(gs))of 0.6 V.As the distance(D_(p))between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm,the fundamental frequency decreases from 377 GHz to 344 GHz,as well as the ratio of oscillation current amplitude of the fundamental component to the average component I_(f1)/I_(avg) ranging from 2.4%to 3.84%.

关 键 词：p-GaN island high electron mobility transistor(HEMT) ALGAN/GAN electron domain 

分 类 号：O441.4[理学—电磁学] TN386[理学—物理]