基于高肖特基势垒的高导通电流隧穿场效应晶体管  

Tunneling Field Effect Transistor with High On-State Current Based on High Schottky Barrier

作　　者：赵瑞英 靳晓诗[1] ZHAO Ruiying;JIN Xiaoshi(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2022年第3期13-16,共4页Microprocessors

摘　　要：为改善双边栅和辅助栅控制的高肖特基势垒隧穿场效应晶体管性能,提出一种基于高肖特基势垒的高导通电流隧穿场效应晶体管。新设计的硅体被刻蚀成U型结构,通过刻蚀硅体两侧形成垂直插入式源漏接触,将源漏电极插入U型硅体两侧垂直部分的一定高度,使源漏接触附近带带隧穿产生区的有效面积显著增加,从而实现更高的开态电流。通过实验,将新结构与HSB-BTFET比较,表明HOSC-HSB-BTFET结构可以实现更高的开态电流、更低的反向漏电流、更小的亚阈值摆幅和更高的开关电流比。In order to improve the performance of high Schottky barrier tunneling FET controlled by double-sided gate and auxiliary gate,a tunneling FET with high on-state current based on high Schottky barrier is proposed.The designed bulk silicon is etched into a U-shaped structure.By etching the two sides of the silicon to form vertical insertion type source-drain contacts,the source-drain electrodes are inserted into a certain height of the vertical parts of the two sides of the U-shaped silicon,so that the effective area of the band-band tunneling generation region near the source-drain contacts is significantly increased,thus realizing a higher on-state current.Through the experiment,comparing the new structure with the HSB-BTFET,it shows that the HOSC-HSB-BTFET structure can achieve higher on-state current,lower reverse leakage current,smaller subthreshold swing and higher switching current ratio.

关 键 词：高肖特基势垒 高导通电流 U型栅 亚阈值摆幅 

分 类 号：TN386.3[电子电信—物理电子学]