高压达林顿晶体管FHD1071的热稳定性设计  

Thermal Stability Design of High Voltage Darlington Transistor FHD1071

作　　者：张小平 高广亮 陈浩 刘帅 伏思燕 苏舟 ZHANG Xiaoping;GAO Guangliang;CHEN Hao;LIU Shuai;FU Siyan;SU Zhou(Jinzhou Liaojing Electronic Technology Co.,Ltd.,Jinzhou 121011,China)

机构地区：[1]锦州辽晶电子科技有限公司,锦州121011

出　　处：《微处理机》2022年第3期25-29,共5页Microprocessors

摘　　要：为进一步探索高压达林顿晶体管的技术优势与潜力,以产品FHD1071为例,对器件的结构、工艺及可靠性进行全面的设计改进,重点考虑热稳定性,同时保证耗散功率和电流容量满足要求。改进设计采用穿通电压结构,既保证正常的击穿电压,又大大减小器件的饱和压降;通过优化实验,对基区选择适当的表面浓度和宽度,以控制放大倍数的变化率;合理设计封装工艺以减小封装热阻。经测试表明,改进设计使达林顿晶体管的热稳定性与可靠性指标得以提升,为产品在高可靠领域的应用提供有力保障。To further explore the technical advantages and potential of high-voltage Darlington transistor,taking FHD1071 as an example,the design of structure,process and reliability of the device are comprehensively improved,with emphasis on thermal stability,while ensuring that the dissipated power and current capacity meet the requirements.The punch-through voltage structure is improved,which not only keeps the normal breakdown voltage,but also greatly reduces the saturation voltage drop of the device.Through the optimization experiment,the appropriate surface concentration and width of the base region are selected to control the change rate of magnification.The packaging process is reasonably designed to reduce the packaging thermal resistance.The test shows that the improved design improves the thermal stability and reliability of Darlington transistor,which provides a strong guarantee for the application of products in high reliability fields.

关 键 词：高压达林顿晶体管 热稳定性 热阻 饱和压降 

分 类 号：TN322.3[电子电信—物理电子学]